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ADuM4146 Half Bridge Board with Onsemi SiC Module

Product Summary

ADuM4146 Half Bridge Board with Onsemi SiC Module

This reference board combines ON Semiconductor's high-performance SiC power module with Analog Devices' gate driver that maximizes its drive performance.

The combination of an isolated SiC gate driver, which has high drive capability and comprehensive protection functions, and a SiC power module that achieves high efficiency, achieves high system reliability and efficiency.

Design data is here

ADuM4146 Half-Bridge Board with OnSemi SiC Module Design Data
Schematics, layouts, BOM lists

Product features

  • Isolated SiC Gate Driver with Built-in Fault Detection and Miller Clamp Function
  • Low-loss, highly efficient SiC power module
  • Double pulse testing possible

Half bridge board specifications

input voltage 680V
output current 25A(UHB50SC12E1BC3N)
50A(UHB100SC12E1BC3N)
frequency 25kHz~50kHz
DUTY 50%
Gate voltage 0V/+15V
PWM input Single-ended/differential
power supply Differential +12V (external)
substrate 4 layers/board thickness 1.6mm/FR-4
weight 1250g *including heatsink and fan
size 180×200×135mm (W×D×H)
*Heat sink + fan included

Analog Devices, Inc. Isolated SiC Gate Driver ADuM4146

Isolated SiC Gate Driver ADuM4146

The ADuM4146 is a high-voltage isolated gate driver IC for SiC-MOSFETs and IGBTs.
This device uses Analog Devices' iCoupler® technology to achieve high-speed, highly reliable switching control.

 
 
- Industry-leading CMT (I common mode transient immunity)
Guaranteed to prevent gate timing errors

- Built-in desaturation detection circuit to protect SiC during high voltage short circuit

・Built-in Miller clamp prevents malfunction when SiC is turned on

・No need for external current buffer + protection circuits
Can be placed close to the gate of the power device

 

Product Datasheet

ONSEMICON SiC power module

ONSEMICON SiC power module

ON Semiconductor's SiC power modules achieve a normally-off operation by internally cascode-connecting SiC JFETs and Si MOSFETs.

 

・Low ON resistance due to SiC FET in which SiC JFET and Si MOSFET are internally cascode-connected

・The gate voltage can be simply driven with 0 to 12 V, the same as for Si MOSFETs, and no negative power supply is required.

・The internal body diode is also Si-based, so the VF in the third quadrant is 1.5V and the Qrr is low even at 150℃.
 
 
Product Datasheet

Application example

  • Inverter for photovoltaic power generation (PV)
  • Motor Drive Unit
  • Power supply for industrial equipment

Design document download

The circuit diagram, layout, and BOM list (bill of materials) for this board can be downloaded free of charge from the application form.

If you are interested, please download it.

Inquiry

If you have any questions about this product, please contact us using the information below.