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DDR4 SDRAM

Product Summary

DDR4 SDRAM is a memory standard that succeeded DDR3, achieving both higher speed and lower power consumption.

Winbond offers DDR4 SDRAM utilizing its proprietary advanced 16nm process technology. This technology supports high-speed data transfer of up to 3200Mbps while achieving smaller die sizes, reduced power consumption, and improved production efficiency.

This memory solution is suitable for a wide range of applications, including industrial equipment, network equipment, and embedded devices.

Features of DDR4 SDRAM

■ Supports data transfer speeds of up to 3200Mbps

Industry-leading speed for DDR4
 

■ 16nm process adopted

This enables smaller die sizes, improved production efficiency, and reduced power consumption.
 

■ Supports high density

It is possible to incorporate higher density DRAM while maintaining the same package size.
 

■ Ensures stable performance even during high-speed operation.

Improved signal quality and reduced leakage current ensure stability even during high-speed operation.

DDR4 SDRAM Product Lineup

capacity type name input voltage speed Operating temperature range Number of silicon die layers Kake composition Package status
4Gb W664GG6R 1.2V 2666/3200Mbps 0℃~95℃ / -40℃~95℃ / -40℃~105℃ SDP 64Mbitx16 VFBGAMore *Consultation required
W664GG8R SDP 128Mbitx8 VFBGAMore *Consultation required
8Gb W668GG6T 1.2V 2666/3200Mbps 0℃~95℃ / -40℃~95℃ / -40℃~105℃ SDP 64Mbitx16 VFBGAMore in mass production
W668GG8T SDP 128Mbitx8 VFBGAMore
16Gb

W66AGG6T

1.2V 2666/3200Mbps 0℃~95℃ / -40℃~95℃ / -40℃~105℃ SDP 64Mbitx16 VFBGAMore Mass production is scheduled to begin in April 2027.

W66AGG8T

SDP 128Mbitx8 VFBGAMore Mass production is scheduled to begin in April 2027.
32Gb

W66BGG6T

1.2V 2666/3200Mbps 0℃~95℃ / -40℃~95℃ / -40℃~105℃ DDP 64Mbitx16 VFBGAMore Mass production is scheduled to begin in July 2027.

W66BGG8T

DDP 128Mbitx8 VFBGA  Mass production is scheduled to begin in July 2027.

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