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SiC MOSFET

SiC MOSFET product overview

A SiC MOSFET is a power semiconductor that uses SiC (silicon carbide). In principle, it does not generate tail current during switching, and is a device that operates at high speed and has low switching loss.

The increase in on-resistance can be minimized, and it is superior to Si (silicon) power semiconductors in terms of package miniaturization and energy saving.

Product features

・High-speed switching, low on-resistance, and small package compared to Si (silicon) power semiconductors

・Additional 35% reduction in switching loss by adopting a 4-pin package (TO-247-4L)

Product lineup (3rd generation trench structure)

Product name VDSS(V) ID (A) PD(W)
(TC=25℃)
RDS(on)
Typ (mΩ)
Qg
Typ(nC)
package
VGS=18V VGS=18V Drive voltage (V)
SCT3017AL 650 118 427 17 172 18 TO-247
(TO-247N)
SCT3022AL 650 93 339 22 133 18
SCT3030AL 650 70 262 30 104 18
SCT3060AL 650 39 165 60 58 18
SCT3080AL 650 30 134 80 48 18
SCT3120AL 650 21 103 120 38 18
SCT3022KL 1,200 95 427 22 178 18
SCT3030KL 1,200 72 339 30 131 18
SCT3040KL 1,200 55 262 40 107 18
SCT3080KL 1,200 31 165 80 60 18
SCT3105KL 1,200 24 134 105 51 18
SCT3160KL 1,200 17 103 160 42 18
SCT3030AR 650 70 262 30 104 18 TO-247-4L
SCT3060AR 650 39 165 60 58 18
SCT3080AR 650 30 134 80 48 18
SCT3040KR 1,200 55 262 40 107 18
SCT3080KR 1,200 31 165 80 60 18
SCT3105KR 1,200 24 134 105 51 18
SCT3030AW7 650 70 267 30 104 18 TO-263-7L
SCT3060AW7 650 38 159 60 58 18
SCT3080AW7 650 29 125 80 48 18
SCT3120AW7 650 21 100 120 38 18
SCT3040KW7 1,200 56 267 40 107 18
SCT3080KW7 1,200 30 159 80 60 18
SCT3105KW7 1,200 23 125 105 51 18
SCT3160KW7 1,200 17 100 160 42 18

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