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Highly reliable lateral GaN HEMTs beyond 1200V for EV and industrial applications

*This article includes a video created by Power Integrations.

Highly reliable lateral GaN HEMTs for EV and industrial applications beyond 1200V (video length: approx. 4 minutes)

Power Integrations' pioneering 1250V gallium nitride power switch ICs provide outstanding transient overvoltage capability, critical for EV and industrial applications requiring high voltages and high reliability. Kamal Varadarajan, Power Integrations' PowiGaN expert, provides an in-depth look at this groundbreaking technology.

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