The channel mobility of SiC MOSFETs is very low and its temperature dependence results in decreasing channel resistance at temperatures between 27°C and 125°C. This compensates for the increase in drift layer resistance with temperature, common to all ideal bulk conduction. The SiC JFET structure has a bulk channel with 10-20 times higher mobility, resulting in lower RdsA. This mobility increases with temperature, matching the ideal bulk mobility.

This results in a larger overall increase in Rds with temperature for SiC cascode FETs. This facilitates paralleling of devices and facilitates robust short-circuit handling capability.