Qorvo FETs use vertical SiC JFETs with much lower RdsA than lateral GaN FETs even at 650 V. It can also be extended to much higher voltage ratings. Cascode devices also use specialized custom LV MOSFETs to simplify FET operation and provide gate drive compatibility with all existing SiC MOS and Si IGBT/MOS switches.

The main structural reason for the superiority of Qorvo SiC FETs comes from their Cds=0 JFET structure, which eliminates the voltage divider problem that occurs in GaN cascodes at high switching speeds in SiC cascodes. .