Started selling 4-terminal SiC-MOSFET -Macnica

ROHM has started selling 4-terminal SiC-MOSFET. By using SiC, this product simultaneously achieves high-speed switching performance, low on-resistance, and high withstand voltage, and also enables a significant reduction in switching loss and miniaturization of the heat sink.

Features of ROHM SiC Mosfet new 4-terminal product

Uses ROHM 3rd generation trench structure 4-pin package (TO-247-4L)
Suppresses reduction in gate voltage and achieves high-speed switching
Switching loss can be reduced compared to conventional 3-terminal products, contributing to further energy savings in applications.

Comparison with conventional 3-terminal package

By newly providing a source terminal for the gate driver, which is not available in the conventional 3-terminal package, we have achieved high-speed switching by suppressing the reduction of the gate voltage.

Loss improvement by realization of high-speed switching (3 terminals vs. 4 terminals)

Compared to the conventional 3-terminal package (TO-247N), switching loss can be reduced by approximately 35%, contributing to lower power consumption in applications.

Product lineup

Product type name	Polarity (ch)	Vdss(V)	RDS(on) Typical (mΩ) <VGS = 18V>
SCT3030AR	N	650	30
SCT3060AR	N	650	60
SCT3080AR	N	650	80
SCT3040KR	N	1200	40
SCT3080KR	N	1200	80
SCT3105KR	N	1200	105

Evaluation Board

The lSiC MOSFET evaluation board "P02SCT3040KR-EVK-001" is equipped with ROHM's gate driver IC (BM6101FV-C), which is ideal for driving SiC devices, various power supply ICs, and discrete products, making it easy to evaluate devices. I can. In addition to TO-247-4L package products, TO-247N products can also be mounted to provide an evaluation environment under the same conditions. Also, by using this evaluation board, it is possible to evaluate double pulse tests, Boost circuits, 2-level inverters, synchronous rectification Buck circuits, etc.