GaN FET

GaNEXUS™ is an enhancement-mode discrete lateral GaN HEMT that leverages the properties of wide-bandgap materials.

Compared to silicon power transistors, it achieves high-speed switching, low gate charge and low output charge, and superior efficiency.
These characteristics enable higher operating frequencies, reduced magnetic components, and improved power density in low / medium, high, and ultra-high voltage power conversion applications.
It is also optimized for compact system designs.

• Medium voltage 40-200V horizontal GaN FET: ON Semiconductor product page
• High-voltage 650-1200V horizontal GaN FET: ON Semiconductor product page

GaN Integrated Power

In the GaNEXUS™ Integrated Power series, GaNEXUS Smart is a product with built-in protection features.
Integrating GaN switches with additional functions such as current sensing and protection into a single device simplifies design, reduces parasitic capacitance, and shortens time to market.
The following products are currently available:

Gate voltage clamp protection, built-in mirror clamp:
NCP58934ABL/NCP58934ABT [650V/27mΩ / TOLL or TOLT]
NCP58935ABL/NCP58935ABT [650V/19mΩ / TOLL or TOLT]

Built-in gate voltage clamp protection, Miller clamp, overheat protection, and short-circuit protection:
NCP58933ABL/NCP58933ABT [650V/42m Ω / TOLL or TOLT]

• GaNEXUS™ Integrated Power ON Semiconductor product page

Inquiry / Quotation

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