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Contributing to the construction of next-generation power supply infrastructure
Low forward voltage, high DC withstand voltage, dual-element diode for microwave WPT applications.
~"NT9000/NT9001/NT9002/NT9003" Release ~


In recent years, microwave-based WPT (Warm Power Transmission) technology has been attracting attention both domestically and internationally as a next-generation power supply infrastructure.
The advancement of digital transformation (DX) and the proliferation of IoT devices are increasing the demand for sustained power supply to a large number of small electronic devices.
In particular, supplying power to locations where wiring and battery replacement are difficult is a major challenge in fields such as factories, social infrastructure, logistics, agriculture, and healthcare.
Furthermore, in terms of legal frameworks, both domestically and internationally, efforts are underway to develop frequency utilization systems and deregulate for microwave-based WPT (Warm Pulse Technology), accelerating the transition from demonstration experiments to social implementation.

The biggest challenge in the practical application of microwave-based WPT is the conversion efficiency when converting received microwaves into DC power.
In particular, IoT applications require high conversion efficiency even in low-power environments.
The NT9000/NT9001/NT9002/NT9003 series are microwave WPT diodes that achieve both low forward voltage and high DC breakdown voltage thanks to Nisshinbo Microdevices' proprietary GaAs wafer process technology.
This enables operation with a wide dynamic range and the realization of highly efficient rectification circuits, providing a solution that supports stable power supply in powered devices utilizing WPT, such as factory automation and IoT devices for building management applications, where wiring and battery replacement are difficult.

The NT9000/NT9001 is ideal for 1W class rectifier circuits, while the NT9002/NT9003 is ideal for 1mW class rectifier circuits, making them suitable for a variety of use cases with different applications and power requirements.
This series serves as a prerequisite technology for stable power supply via WPT (Water Power Transit) on-site, enabling continuous operation that does not rely on wiring or battery replacement, and supporting the resolution of social issues in various fields.

The main features are as follows:

• Frequency bands:920MHz band, 2.4GHz band, 5.7GHz band

• High reverse voltage *1: 20V

Low forward voltage:0.1V typ.

• Low reverse leakage current:10μA/20μA typ. (NT9000/NT9001)
0.5μA/1μA typ. (NT9002/NT9003)

・Low equivalent series resistance:4Ω/2Ωtyp. (NT9000/NT9001)
110Ω/55Ω typ. (NT9002/NT9003)

• Low equivalent capacitance:0.2pF/0.4pF typ. (NT9000/NT9001)

         0.025pF/0.03pF typ.(NT9002/NT9003)

*1: Absolute maximum rating

NT9000/NT9001/NT9002/NT9003 (DFN1212-4-HD)

NT9000/NT9001/NT9002/NT9003 (DFN1212-4-HD)

Features

Low forward voltage and high DC withstand voltage

This product features a low forward voltage of 0.1V, enabling highly efficient DC conversion in rectifier circuits even with low input power. Furthermore, even when input power increases and output voltage rises, its high DC withstand voltage suppresses component failure and increased leakage current, ensuring stable rectification operation.
These features enable rectifier circuits using this product to achieve highly efficient DC voltage conversion over a wide input power range.



■Example of a 5.7GHz band voltage doubler circuit using NT9000

■Example 1 of a 5.7GHz band voltage doubler circuit using NT9000
■Example 2 of a 5.7GHz band voltage doubler circuit using NT9000

Small package

This product utilizes a small DFN package (1.2 × 1.2 mm) and incorporates two diode elements within a single package. This contributes to reducing the mounting area.
Furthermore, by adopting this package, even when combining multiple units to construct a rectifier circuit, it is possible to significantly reduce the mounting area on the circuit board, especially in applications with a large number of components, such as multi-stage connections and bridge configurations.

Figure: Block diagram of NT9000/NT9001/NT9002/NT9003

Figure: Block diagram of NT9000/NT9001/NT9002/NT9003

Application example

• Microwave-type WPT rectifier circuit

Detector

Main specifications (please refer to the data sheet for details)

Item

NT9000

NT9001

NT9002

NT9003

package

DFN1212-4-HD
1.2 × 1.2 × 0.427mm

frequency band

920MHz band, 2.4GHz band, 5.7GHz band

Forward voltage

0.1V typ.
@ IF = 60μA

0.1V typ.
@ IF = 120μA

0.1V typ.
@ IF = 2μA

0.1V typ.
@ IF = 4μA

Reverse leakage current

10μA
@ VR = 2V

20μA
@ VR = 2V

0.5μA
@ VR = 2V

1μA
@ VR = 2V

Equivalent series resistance

4Ω typ.

2Ω typ.

110Ω typ.

55Ω typ.

Equivalent capacity

0.2pF typ.

0.4pF typ.

0.025pF typ.

0.03pF typ.

Details (datasheet) for "NT9000/NT9001/NT9002/NT9003" can be found here.

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