Infineon SiC: Silicon Carbide, Power Semiconductor Product Overview
Infineon offers 2000V/1700V/1200V/650V voltage discretes and modules, and 1200V/650V voltage discretes as SiC diodes as a SiC MOSFET product lineup for industrial and consumer use.
The SiC MOSFET adopts Infineon's original cell structure (single-sided trench structure), and the reliability of the gate oxide film is improved by structuring the cell with few crystal defects by aligning the surfaces. Furthermore, by making the gate oxide film closer to silicon, it can be driven with a high gate threshold equivalent to that of silicon MOSFETs. In addition, regarding the body diode characteristics, the forward current value that does not cause deterioration of VF is specified in the data sheet by Infineon's own countermeasures.
SiC product features
- Supports a wide range of package lineups from discretes to modules
- With a wide range of withstand voltages from 650V to 2000V, we can make proposals that suit your application.
- Due to the trench structure, it is possible to reduce the element resistance compared to the planar structure.
- Because VGS(th) is high (Typ 4.5V or more), it can be driven without negative bias depending on the circuit specifications.
- Since we are taking measures against VF deterioration of the body diode, the forward current value that does not cause VF deterioration is specified in the data sheet.
- By setting Qgs>Qgd, the possibility of gate malfunction due to noise and dv/dt is reduced.
What are Infineon SiC products?
Silicon Carbide (SiC) offers designers new flexibility to achieve unprecedented levels of efficiency and reliability.
Infineon offers a wide range of package lineups and voltage ranges to flexibly respond to customer design requirements. In addition, the trench structure reduces the element resistance compared to the conventional planar structure, and the high Vgs(th) and Qgs>Qgd make it easier for customers to control. In addition, as a countermeasure against VF deterioration of the body diode, the internal layers are adjusted to prevent defect expansion.
In addition, Infineon is actively investing in its own factories to increase SiC production capacity.
Product lineup
*1: Module products are Tvj=175°C.
Evaluation Board
EiceDRIVER™ 2L-SRC Compact evaluation board with 2-step slew rate control
Board name: EVAL-1ED3241MC12H
Evaluation Board for 2300V/9A 1-Channel Flexible Isolated Gate Driver 1ED3491Mx12M with Active Miller Clamp, Adjustable DESAT and Soft-Off
Board name: EVAL-1ED3491MX12M
2300 V, 14 A, 5.7 kV (rms) Single Channel Isolated Gate Driver Evaluation Board with UL 1577 Recognition, UVLO: 10.5 V
Board name: EVAL-1ED3124MX12H
Target application
Related product
