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EiceDRIVER™ gate driver IC product overview
Infineon's CoolSiC™ MOSFET 1200V series can be easily controlled using an isolated gate output section.
Therefore, we recommend using EiceDRIVER™ galvanically isolated gate driver ICs based on Infineon's coreless transformer technology. EiceDRIVER™ gate drivers drive silicon carbide MOSFETs with excellent propagation delay matching, accurate input filtering, wide output supply range, negative gate voltage drive capability, high common-mode transient rejection, active Miller clamping, and DESAT protection. It implements important functions and parameters for EiceDRIVER™ gate drivers offer over 500 different solutions. This page introduces products that are most suitable for silicon carbide MOSFETs, but you can also select EiceDRIVER™ gate drivers according to your application, such as by insulation or by switching device.
EiceDRIVER™ gate driver IC product features
- Wide body package with 8mm creepage distance
- Suitable for high temperature operation
- active miller clamp
- Short-circuit clamp and active shutdown
What is EiceDRIVER™ gate driver IC?
As EiceDRIVER™ gate drivers, Infineon offers a superior product family of galvanically isolated gate drivers, automotive qualified gate drivers, 200V, 500-700V, 1200V level shifting gate drivers and non-isolated low side drivers. Infineon's EiceDRIVER™ gate drivers include built-in bootstrap diode (BSD), overcurrent protection, shutdown, fault reporting, enable, input filter, operational amplifier, desaturation detection, programmable dead time, shoot-through protection, active Miller clamp, active shutdown , sinking and sourcing output isolation, short-circuit clamping, soft shutdown, two-level turn-off, galvanic isolation (functional, basic, enhanced) and other advanced features.
EiceDRIVER™ gate driver IC product lineup
| product | model number | Peak drive current (Typ value) | VCC2-VEE2 | UVLO閾値 (Typ値) |
transmission delay (Typ value) |
miller clamp |
| 1EDC/1LED Miniature Isolation Iside Driver Family | 1EDI20I12MF | 3.5A | 20V | 11.9V/11V | ≤ 300ns | 〇 |
| 1EDC20H12AH | 3.5A | 35V | 12V/11.1V | ≤ 125ns | × | |
| 1EDC60H12AH | 9.4A | 35V | 12V/11.1V | ≤ 125ns | × | |
| 1EDC20I12MH | 3.5A | 20V | 11.9V/11V | ≤ 300ns | 〇 | |
| 1ED-F2 Isolated high-side driver (built-in protection function) | 1ED020I12-F2 | 2.0A | 28V | 12V/11V | ≤ 170ns | 〇 |
| 2ED-F2 Isolation dual side driver (built-in protection function) | 2ED020I12-F2 | 2.0A | 28V | 12V/11V | ≤ 170ns | 〇 |
| 1EDU Slew Rate Control (SRC) Isolated High Side Driver | 1EDU20I12SV | 2.0A | 28V | 11.9V/11V | ≤ 485ns | 〇 |
Evaluation Board
・Board name: EVAL-1EDC20H12AH-SIC
・Gate driver: 1EDC20H12AH
・SiC MOSFET: IMZ120R045M1
・Board size: 85mm x 55mm x 30mm3
