Surface-mount TOLL package SiC FET with low on-resistance and reduced mounting area

Qorvo has expanded its groundbreaking Gen 4 SiC FET portfolio. It is a surface mount type TO leadless (TOLL) package product. This product is the first in the 750V​ ​SiC FET family to be released in a TOLL package, with on-resistance ranging from 5.4 [mΩ] to 60[mΩ]. These products are ideal for use in space-constrained applications such as AC/DC power supplies from a few hundred watts to several kilowatts, and solid state relays and circuit breakers up to 100A levels.

In the 600/750V class of power FETs, Gen 4 SiC FETs demonstrate excellent performance in the on-resistance and output capacitance figures of merit (FOM). Furthermore, the TOLL package 5.4 [mΩ] product achieves 4 to 10 times lower on-resistance than other companies' Si MOSFETs, SiC MOSFETs, and GaN transistors. Also, the 750V rating of SiC FETs is 100-150V higher than alternative technologies, allowing significantly improved design margins for managing voltage transients.

The TOLL package has a 30% smaller footprint and half the height of 2.3mm compared to the D2PAK surface mount product. The TOLL package also allows a Kelvin source connection for cleaner gate waveforms for reliable and fast switching of high currents.

This SiC FET uses Qorvo's unique cascode circuit configuration that combines SiC JFETs and Si MOSFETs to improve efficiency through wide bandgap switch technology and simplify the gate drive of silicon MOSFETs. Ultra-low on-resistance in a small TOLL footprint is achieved by Qorvo SiC FET technology's world's highest on-resistance x area (R _DS(On)x A) and best-in-class figure of merit (FOM).

Despite the significant size reduction, advanced manufacturing technologies such as sintered die attach have achieved the industry's highest level of thermal resistance from the junction to the case of 0.1°C/W. The 750V/5.4[mΩ]​ ​UJ4SC075005L8S has a continuous current rating of 120A up to a case temperature of 144°C and a pulse current rating of 588A up to 0.5ms.

Ultra-low on-resistance, high T. _j,max =175℃, in combination with excellent transient thermal behavior, in the same package Si MOSFET about than 8 times better I ² t rated to increase robustness and immunity to transient overloads while simplifying the design task. figure Four teeth, TOLL packaged in Si and SiC FETs It shows the maximum pulse current and pulse width of the . In this example FETs teeth PCBs mounted in thermal vias, insulating thermal interfaces, T. _HS =50℃ modeled assuming a heat sink kept at R. _th,c-hs =1.4 ℃ /W). The steady-state thermal resistance from junction to heat sink is respectively 1s under a pulse exceeding FETs limit the rated current of the In this area SiC FETs is high T. _j,max, due to low on-resistance and low thermal resistance 2 Demonstrates the advantage of more than doubling the current handling.

However, much larger transient overcurrents (maximum continuous current 4-6 times) can withstand. Qorvo Of new TOLL FETs teeth, SiC excellent thermal resistance, advanced Ag-sinter die attach, 175℃, and ultra-low on-resistance at high current densities to provide excellent surge current performance. figure Four In the example of SiC FETs is the lowest on-resistance of the same package. Si MOSFET (t _p ~0.5ms-1ms)Than 2.8 shown to be twice as high.

The low conduction losses, small size, high surge ruggedness, and excellent turn-off capability of this new ultra-low on-resistance TOLL part make it ideal for often thermally demanding protection applications in small enclosed spaces where active cooling is not available. has become a good candidate. It also reduces the need to parallel multiple FETs, minimizing heat sinking.

Qorvo 750V SiC FET Product Portfolio

The Qorvo 750V SiC FET product portfolio is detailed on the SiC FET product page. If you are interested, please see the details below.

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