UJ4C SiC FET series

New Gen4UJ4C series of SiCFETs breakthrough performance designed to accelerate power performance improvements in automotive and industrial charging, communications rectifiers, data center PFC DC-DC conversion, renewable energy and energy storage applications provide a level.

Highlights of the new SiCFET series are:

・750V, VDS rating
Best-in-class figure of merit reduces conduction losses and increases efficiency at high speeds, all delivering new levels of cost-effectiveness.
Safely driven by common 0V to 12V or 15V gate drive voltages
・Excellent noise margin with VTH=5V
・Works with all SiIGBT, Si MOSFET, and SiCMOSFET drive voltages
・Built-in ESD gate protection clamp
・All devices are AEC-Q101 qualified
Uses industry-standard TO247-3L and TO247-4L (Kelvin) packages

Based on the Company 4th generation technology, these new SiC FETs incorporate superior features that offer power designers a direct path to greater performance and efficiency in their unique systems.

Main Specifications

・750V

・Low RDS (on) from 18mΩ to 60mΩ

Key figures of merit enable next-generation high-performance power designs

- Best in class RDS(on) x area

- Improved loss of Qrr and Eon/Eoff at a given RDS(on)

- Reduce both Coss(er)/Eoss and Coss(tr)

・Excellent reverse recovery

・Excellent body diode performance (Vf <2V)

・Low gate charge

・ESD protection, HBM class 2

・TO247-3L and TO247-4L (Kelvin) packages

・AEC-Q101 certified

Device specifications

best figure of merit

Comparing figures of merit (FoM) is important for power designers to assess the potential performance of competing technologies. By evaluating technologies on a FoM basis, designers can not only identify the best technology for their design based on specific product specifications, but also broadly compare performance across different topologies, power levels, etc.

UnitedSiC's new 750V Gen 4 SiC FET delivers industry-leading performance for power switch FoM with new benchmarks for RDS(on) x Area, RDS(on) x Coss, tr, and RDS(on) x Eoss . The datasheet results presented below show how the new high-performance Gen 4 series devices offer lower conduction losses, simpler gate drive, and reduced conduction losses in hard and soft switching circuits compared to competing SiC FET devices. Indicates whether to provide switching losses.

RDS(on) x Area

Lowest conduction loss over useful temperature range for a given footprint or package type

65-75% less conduction losses at 25°C

45-70% less conduction losses at 125°C

hard switching

Minimum total loss based on low Eoss/Qoss x RDS(on)

・競合他社のほぼ2倍優れています

soft switching

Maintaining low RDS(on) x Coss, tr enables higher power density in soft-switching applications.

・5 to 10 times less gate drive loss due to Qg xVDrive

・Excellent body diode enables reliable operation without resonance

4th generation SiC FET introduction video

If you are interested, please take a look at the video that explains in an easy-to-understand manner the characteristics of the 4th generation SiC FET products that have just started selling, starting with the company introduction of Qorvo.

Inquiry

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