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Positioned as next-generation power semiconductors, silicon carbide (SiC) products, which are rapidly being put to practical use, offer excellent switching characteristics and high reliability. Therefore, the system has advantages such as high efficiency, reduced power loss, increased power density, increased operating frequency, and improved temperature behavior, leading to system size reduction and cost reduction.
ONSEM, a leading power semiconductor company, offers a variety of SiC products, including SiC Schottky barrier diodes and SiC MOSFETs. In this article, we will introduce the following four SiC-related products provided by ONSEMI.
- SiC Schottky barrier diode
- SiC MOSFET
- Gate driver for driving SiC MOSFET
- SiC module
SiC Schottky barrier diode
SiC Schottky barrier diodes feature almost no reverse recovery time, switching characteristics with little characteristic fluctuation due to temperature, and excellent thermal performance with a maximum junction temperature Tj of 175°C.
In addition, conventional silicon Schottky barrier diodes had a breakdown voltage of around 200V, but now SiC Schottky barrier diodes are available with voltage breakdown voltages of 650V/1200V/1700V, and ONSemi has over 100 products. Available.
ONSemi has a particularly strong competitive edge in the 650V product line, where each company has a wide range of current capacities and packages.
SiC MOSFET
SiC MOSFETs offer significant advantages over conventional IGBTs and silicon MOSFETs for high voltage switching power supply applications. Switching frequencies up to 50 kHz for IGBTs can now be driven at high frequencies up to 1 MHz for SiC MOSFETs. As a result, the size and cost of peripheral components can be reduced.
SiC MOSFETs are also very robust, offering higher surge ratings, improved avalanche capability, and higher reliability compared to silicon devices. In addition, all ONSemi SiC MOSFETs have AEC-Q101 qualified and PPAP-compatible options for automotive and other applications.
ONSemi currently offers 900V/1200V SiC MOSFETs with current capabilities up to 103A for 1200V devices and 118A for 900V devices. We also plan to further expand our product lineup in the future.
Gate driver for driving SiC MOS - NCP51705
SiC MOSFETs enable high-speed operation, but in order to fully utilize their capabilities, appropriate drive circuit design is essential. To take full advantage of the performance of SiC MOSFETs, we have the NCP51705 gate driver for driving SiC MOSFETs.
The features of NCP51705 are as follows.
VDD positive voltage supply up to 28V
To achieve the lowest on-resistance RDS(ON) for SiC MOSFETs, the driver must provide a gate drive swing of 20V to 22V during the on-time, hence high voltage.
High peak output current of 6 A source/6 A sink
Similar to traditional silicon MOSFETs, the internal capacitance of the MOSFET is quickly charged/discharged during turn-on and turn-off to deliver high peak currents for fast switching.
DESAT function
This is an overcurrent detection function originally derived from the circuit used to drive IGBTs. It can be implemented using only two external components (a resistor and a diode), and the drain-source voltage of the SiC MOSFET is monitored at the DESAT pin via its resistor and diode.
Charge Pump VEE (VEESET) Function
It has a built-in negative power supply for sinking, and by changing the connection of the VEESET pin, it is possible to set four levels of negative potential from GND to -8V.
Programmable undervoltage lockout (UVLO): UVSET function
This function allows setting of the UVLO voltage level using an external resistor.
In order to maximize the performance of SiC MOSFETs, please consider using the gate driver NCP51705, which has the above functions.
SiC module
ONCEMI also offers a wide variety of modules.
NXH80B120MNQ0, a 2-channel module that integrates a 1200V, 80mΩ SiC MOSFET and a 1200V, 20A SiC diode,
We have 1200V, 4mΩ SiC MOSFET half bridge modules.
We also have a large number of automotive compatible modules.
Please check ONCEMI's website to see if we have the module product you are looking for.
Onsemi SiC module product lineup
Inquiry
A wide range of demanding and high-growth applications such as solar inverters, on-board chargers for electric vehicles (EVs), uninterruptible power supplies (UPS), server power supplies, and charging stations If you are looking for SiC products that can achieve performance that is impossible with silicon MOSFETs for your application and contribute to reducing system size and cost, please contact us using the inquiry button below.
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