CoolSiC™ MOSFET 1700V products can now be surface mounted!

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Product Summary

Infineon's first 1700V class SiC MOSFET portfolio targets auxiliary power circuits that generate power for control logic, displays and cooling fans in three-phase power systems. Industry recommended practice for such low power applications (single-ended flyback topology) is now available up to 1000VDC input voltage.

The 1700V blocking voltage eliminates design concerns around voltage stress margins and power supply reliability. SiC MOSFET technology has lower on-resistance and device capacitance compared to 1500V Si MOSFETs, which reduces losses by more than 50% and enables compact SMD integration using natural convection cooling without heatsinks.

Product features

Infineon's CoolSiC™ trench technology with excellent gate oxide reliability
SMD integration into PCB (using natural convection cooling without additional heatsink)
Optimized for flyback topology with +12V / 0V gate-to-source voltage compatible with common PWM controllers
Reduced insulation work by extending package creepage and clearance distances
Lowest device capacitance and gate charge seen in 1700V switches

What is the CoolSiC™ MOSFET series?

CoolSiC™ MOSFETs are ideal for both hardware and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, DC/DC converters and DC/AC inverters. The excellent immunity to unwanted parasitic turn-on effects provides a benchmark for low dynamic losses, even with a turn-off voltage of 0V in bridge topologies. Infineon's TO and SMD package products can also add Kelvin source pins for switching performance optimization.