Ferroelectric Random Access Memory (FRAM) is non-volatile like flash, but supports high-speed, low-power writes, with over 1000 trillion write endurance and excellent flexibility. It has the ability (*).

*FRAM can be written/read at high speed and can be handled like SRAM. Therefore, it is possible to flexibly change the program area and data area.

You can check the details from the link below.

http://www.tij.co.jp/lsds/ti_ja/microcontrollers_16-bit_32-bit/msp/ultra-low_power/msp430frxx_fram/what_is_fram.page#molecular