For SiC cascode FETs, turn-on speed can be improved by using higher Vgs(on) or lower Rgon. Device turn-on can be slower with higher Rgon and lower Vgs(on). Using Rgoff makes it harder to adjust the turnoff, but higher Rgoff actually slows down the device. A small RC snubber on the DC bus or throughout the device is recommended to significantly reduce switching loss degradation and minimize overshoot and ringing.

Please see the reference article below.
How to slow down dV/dt during switching of SiC FETs