Qorvo has focused on SiC JFET-based cascodes due to the superior properties of cascode devices such as ease of gate drive, good body diode behavior, and good short circuit handling. The lower RdsA of SiC vertical JFETs compared to SiC planar and trench MOSFETs also makes them more cost effective. This is because the channel area of the MOSFET contributes significantly to the RdsA of the device.

We can see that this difference becomes even more pronounced at 1200 V and even more so at 650 V, even as both JFET and MOSFET technologies advance. With the release of stacked cascode chips in 2019, Qorvo's cascode assembly complexity will be on par with SiC MOSFETs. These improvements make cascodes a long-term solution for power electronics that require the benefits of wide bandgap (WBG) switches.