SiC MOSFETs have very low channel mobility and its temperature dependence results in a decrease in channel resistance at temperatures between 27 °C and 125 °C. This compensates for the increase in drift layer resistance with temperature, common to all ideal bulk conduction. SiC JFET structures have a bulk channel with 10-20 times higher mobility, resulting in a lower RdsA. This mobility increases with temperature to match the ideal bulk mobility.

This results in a larger overall increase in Rds with temperature for SiC cascode FETs, which makes it easier to parallel devices and thus provide robust short-circuit handling capability.