In fact, the Eas capability of a SiC device depends on the die size. But in real applications, what is more important is the device's ability to handle the high peak currents of low-energy avalanches that can occur during lightning strikes and other overstress events on AC lines. This is where ON Semiconductor's SiC cascode JFETs excel.

This is because the JFET has a mechanism for handling avalanches by going into active mode: very high avalanche current densities can be safely handled in repetitive mode without changing device parameters or capacitance, far better than conventional SiC MOSFETs where the gate oxide can be affected.