For SiC cascode FETs, turn-on speed can be improved by using a higher Vgs(on) or lower Rgon. The device may turn on slower with a higher Rgon and lower Vgs(on). Turn-off is harder to tune with Rgoff, but a higher Rgoff actually slows down the device. To significantly reduce switching loss degradation and minimize overshoot and ringing, a small RC snubber on the DC bus or across the device is recommended.