ON Semiconductor's SiC cascode JFETs are commonly used in parallel to boost power output. The performance of the SiC cascode JFET is dominated by the SiC JFET, which provides a device with controlled switching speed, no Vth degradation with temperature, and a strong positive temperature coefficient of Rdson. These properties allow the devices to be paralleled very effectively and with low sensitivity to variations in Vth etc. of the lower voltage MOSFET.