Product Summary
IGBT stands for Insulated Gate Bipolar Transistor. A device with a MOSFET structure for the input part and a BIPOLAR structure for the output part, it is a transistor that achieves both low saturation voltage and relatively fast switching characteristics.
ROHM's IGBT products contribute to high efficiency and energy savings in a wide range of high voltage and high current applications.
Product features
・Low saturation voltage (equivalent to low on-resistance of power MOSFET)
・Fast switching speed and low on-resistance even with high withstand voltage
Product lineup
| Model number (Field Stop Trench IGBT) new product |
series | Vces(V) | IC (100°C) [A] |
Vce (Typ) [V] |
tf (Typ) [ns] |
Built-in diode | Package | Package size |
| RGWS00TS65 | WS: High speed SW, cost effective | 650 | 50 | 1.6 | 38 | - | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWS00TS65D | WS: High speed SW, cost effective | 650 | 50 | 1.6 | 38 | FRDMore | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWS60TS65 | WS: High speed SW, cost effective | 650 | 30 | 1.6 | 46 | - | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWS60TS65D | WS: High speed SW, cost effective | 650 | 30 | 1.6 | 46 | FRDMore | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWS80TS65 | WS: High speed SW, cost effective | 650 | 40 | 1.6 | 40 | - | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWS80TS65D | WS: High speed SW, cost effective | 650 | 40 | 1.6 | 40 | FRDMore | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWSX2TS65 | WS: High speed SW, cost effective | 650 | 60 | 1.6 | 29 | - | TO-247GE | 15.94x20.95 (t=5.02) |
| RGWSX2TS65D | WS: High speed SW, cost effective | 650 | 60 | 1.6 | 29 | FRDMore | TO-247GE | 15.94x20.95 (t=5.02) |
Related information
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