[Free Seminar] SiC/GaN-equipped! New Design Method for Next-Generation Switching Power Supplies (Date: April 17, 2026) -Macnica

[Free Seminar] SiC/GaN-Equipped! New Design Method for Next-Generation Switching Power Supplies (Date: April 17, 2026)

Seminar overview

Information about a seminar hosted by ROHM Co., Ltd.

We will be holding a seminar titled "New Design Methods for Next-Generation Switching Power Supplies Equipped with SiC/GaN!" starting at 1:00 PM on Friday, April 17th.
This seminar will focus on "noise countermeasures," "heat countermeasures," "board design," and "simulation," which are important in circuit design and implementation using SiC/GaN power transistors.
Three experts will provide systematic explanations in four sessions from their respective fields of expertise.
Using simulations, experiments, and examples, we will clarify the mechanisms behind problems that arise in design issues such as high voltage resistance, high-speed operation, and miniaturization, starting from the basics.
This course will give you concrete measures and pre-verification concepts that you can use in your design.

There will also be a social gathering after the seminar. Please feel free to join us.

■Date: Friday, April 17, 2026
　Reception: 12:30
Seminar: 13:00~17:40
Social gathering: 17:50~18:50 (lecturer will be present)

■ Venue: ROHM Shin-Yokohama Station Building (right next to Shin-Yokohama Station Station / 2-4-8 Shin-Yokohama, Kohoku-ku, Yokohama)[Map here]
■Participation fee: Free (Pre-registration required / If there are a large number of applicants, a lottery will be held)

This is a popular seminar, so we recommend that you register early.
*Application deadline: 3:00 PM, Tuesday, March 31st
*This seminar will be held in person.

For details and to apply for the seminar, please click here (ROHM website)

I recommend this hotel

・Those involved in the design and development of power supplies/inverters, industrial robots, machine control units, etc.
・Those involved in the development and thermal design of data centers/servers, PCs, control/measurement equipment, etc.
・People who are interested in related topics

agenda

time	content
Session 1 13:10-14:10	Design Technology for ±1.5kV Ultra-High-Voltage Switching Amplifiers Using SiC MOSFETs - High-voltage, highly reliable drive circuit that combines design margin and low heat generation -
Session 2 14:20-15:20	Understanding SiC/GaN FET characteristics and circuit design fundamentals ~A design approach to reduce losses, increase speed, and miniaturize based on the internal structure of semiconductors~
Session 3 15:30-16:30	Key points for gate drive circuit and substrate design using SiC/GaN FETs - From causes and countermeasures for malfunctions and problems to advance verification through simulation -
Session 4 16:40-17:40	Latest thermal design and simulation techniques for the high-speed power device era - Efficient heat dissipation and cooling methods at the early design stage and verification through calculations and analysis -
17:50-18:50	Social gathering (lecturers will also be participating)

Inquiry

If you have any questions, please contact us from here.

Back to ROHM Manufacturer Information Top

If you want to return to ROHM manufacturer information TOP, please click below.

Back to Manufacturer Information Top

Site Search