Industry-leading* low on-resistance! Development of a compact MOSFET ideal for rapid charging

*As of April 15, 2025, based on ROHM research, with a package size of 2.0mm x 2.0mm

ROHM Co., Ltd. (headquarters: Kyoto City) has developed the AW2K21, an N-channel 30V withstand voltage common-source MOSFET with an industry-leading on-resistance of 2.0mΩ (Typ.) in a package size of 2.0mm x 2.0mm.

　
The new products use ROHM's unique structure to improve cell integration and reduce on-resistance per chip area. In addition, a single element is designed to incorporate two MOSFETs, enabling a single new product to meet the bidirectional protection needs of power receiving circuits.

　
In addition, this unique structure allows the drain terminal, which is usually located on the back side in a typical vertical trench MOS structure, to be located on the surface of the device, thereby enabling the adoption of WLCSP.
WLCSP allows a larger proportion of the chip area inside the component, which reduces the on-resistance per component area.This reduction in on-resistance not only reduces power loss, but also contributes to larger currents, making it possible to support high-power rapid charging despite the ultra-compact size.
In comparison, in the power receiving circuits of small devices, two conventional products measuring 3.3 mm x 3.3 mm are required, whereas this product requires only one measuring 2.0 mm x 2.0 mm, allowing for a component area reduction of approximately 81% and a reduction in on-resistance of approximately 33%.
It can also be used as a unidirectional protection MOSFET for load switches, and in this case too, it achieves the industry's lowest on-resistance.

Please see here for details.

・ ROHM website

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