Product Summary
Qorvo offers a wide variety of discrete transistor components using our state-of-the-art ultra-low noise 0.15μm pHEMT (Pseudomorphic High Electron Mobility Transistor) and 0.25μm E-pHEMT processes. These discrete devices allow complete control when designing Low Noise Amplifier (LNA) circuits. A range of discrete FETs are available with NF(min) as low as 0.15dB and can be used up to 22GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.
Product main features
- Ultra-low noise: 0.15dB NF (min)
- Available in die or package format
Product lineup
This is a list of GaAs pHEMT product lineup and LNA product lineup composed of GaAs pHEMT die.
For more detailed product specifications, please see the manufacturer's page below.
Qorvo GaAs pHEMT product list page
GaAs pHEMT Product Lineup
| model number | data sheet | Overview | Gain [dB] | P1dB[dBm] | NF[dB] | PAE[%] |
| QPD2018D | DC - 20GHz, 180um Discrete GaAs pHEMT Die | 14 | 22 | 1 | 55 | |
| QPD2025D | DC - 20GHz, 250um Discrete GaAs pHEMT Die | 14 | 24 | 0.9 | 58 | |
| QPD2040D | DC - 20GHz, 400um Discrete GaAs pHEMT Die | 13 | 26 | 1.1 | 55 | |
| QPD2060D | DC - 20GHz, 600um Discrete GaAs pHEMT Die | 12 | 28 | 1.14 | 55 | |
| QPD2080D | DC - 20GHz, 800um Discrete GaAs pHEMT Die | 11.5 | 29.5 | 1 | 56 | |
| QPD2120D | DC - 20GHz, 1200um Discrete GaAs pHEMT Die | 11 | 31 | 1 | 57 | |
| QPD2160D | DC - 20GHz, 1600um Discrete GaAs pHEMT Die | 10.4 | 32.5 | 1 | 63 |
LNA product lineup consisting of GaAs pHEMT die
| model number | data sheet | Overview | Gain [dB] | P1dB[dBm] | IP3[dBm] | NF[dB] |
| TQL9066 | 50 - 1500MHz High IP3 Dual LNA (Low Noise Amplifier) | 18.4 | 21.4 | 40 | 0.62 | |
| TQP3M9040 | 1500 - 2300MHz High IP3 Dual LNA (Low Noise Amplifier) | 18 | 20.8 | 39.8 | 0.62 | |
| TQP3M9041 | 2300 - 6000MHz High IP3 Dual LNA (Low Noise Amplifier) | 18.4 | 22.5 | 38.2 | 0.8 |
Target application
- base station
- Defense Communications
- Point-to-Point (PtP) Wireless
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Inquiry / Quotation
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