Groundbreaking Performance of UnitedSiC 750V 4th Generation SiC FET

UnitedSiC has released its 4th generation SiC FETs to complement its already strong portfolio of industry-leading SiC FETs. This will accelerate the adoption of SiC in automotive and industrial chargers, rectifiers in communication infrastructure, PFC and DC/DC conversion for data centers, and renewable energy and energy storage applications.

The new 750V series now offers more design margin for 400V or 500V battery/bus voltage applications than previous products. Gen4 devices employ higher cell densities, even with increased voltage ratings, enabling lower RDS(on) per unit area and industry's lowest on-resistance products provided in all packages. Additionally, high current ratings are achieved through advanced sintered die attach technology, providing improved heat dissipation performance. Figure 1 compares the on-resistance per unit area of the new 750V product to a competitor's 650V rated product. It shows significantly lower values over the entire temperature range.

Ease of design is also a hallmark of UnitedSiC Gen4 devices. All devices can be safely driven with standard 0V to 12V or 15V gate drive voltages. A gate threshold voltage of 5V maintains good threshold noise margins. As with the previous generation, these new SiC FETs can operate with all common Si IGBTs, Si MOSFETs and SiC MOSFET drive voltages and incorporate an internal ESD gate protection clamp. In addition to their low on-resistance, these new SiC FETs can improve efficiency in both hard-switched and soft-switched circuits. In hard-switching circuits such as totem-pole PFCs and standard two-level inverters, the low on-resistance and low output capacitance per unit area, combined with the near-zero stored charge of low-voltage Si MOSFETs, provide excellent reverse recovery charge ( Qrr) and low Eoss/Qoss. These devices exhibit excellent robust integrated diode characteristics with low voltage drop VF (<1.75V).

Figure 2 shows that the hard-switching figure of merit (FoM) calculated as RDS(on) x Eoss for the 750V UnitedSiC FET is better than the 650V rated competitor SiC product. The UJ4C075018K3S (TO247-3L package) and UJ4C075018K4S (TO247-4L package) feature a low on-resistance of 18mΩ, which is 50% lower at 25°C and almost 40% lower at 125°C compared to the closest competitor. I'm here.

These new devices also improve performance in high frequency soft-switching resonant converter topologies such as LLC (resonant scheme) and PSFB (phase shift full bridge scheme). The breakthrough performance of 750V UnitedSiC FETs is achieved by significantly reducing on-resistance while providing lower output capacitance Coss(tr). In Figure 3, the superiority of the resonant or soft-switching scheme is shown by the FoM (here RDS(on) x Coss(tr)).

The figure also shows an example LLC turn-off waveform where the delay caused by Coss(tr) can limit the maximum usable frequency. The 4th generation UnitedSiC FETs have very low Coss(tr) and high voltage ratings for fast turn-off. The soft-switching figure-of-merit benefit is best-in-class over all operating temperatures. The radar plot shown in Figure 4 summarizes the superiority of the 4th generation 750V FETs. Given the commonly used hard and soft switching, SiC FETs are unique. The extremely low on-resistance per unit area enables standard discrete packages with performance unattainable with existing Si and emerging SiC competing technologies.

These SiC FETs from UnitedSiC offer a whole new level of performance enabled by advanced 4th generation technology. Our 750V products give designers additional bus voltage headroom. The “figure of merit”, a key parameter for overall superior performance SiC FET products, enables power supply designers to benefit in next-generation system designs.

For more information on these new devices, please visit www.unitedsic.com.

4th generation SiC FET introduction video

It is a video that explains in an easy-to-understand manner the company introduction of UnitedSiC and the features of the 4th generation SiC FET products that are now on sale, so if you are interested, please take a look.

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