1250V and 1700V PowiGaN delivers the efficiency and power density required for 800VDC AI data centers

Power Integrations is supporting the early development of 800V data center bus architectures using its high-voltage PowiGaN™ technology. As the only supplier of mass-produced 1250V and 1700V GaN switches, Power Integrations is collaborating with NVIDIA for the transition to 800VDC architectures and megawatt-class racks.

For more details on this initiative, please see the technical documents below.
Power Integrations' Announced at the 2025 OCP Global Summit White Paper Download this white paper to learn how 1250V and 1700V PowiGaN HEMTs deliver the efficiency, power density, and reliability required in modern AI data centers. Compared to stacked 650V GaN FETs and 1200V SiC devices, a single 1250V PowiGaN switch delivers clearly superior performance and simplified design.

■ Advantages of PowiGaN
Simplified gate driver circuitry provides better short-circuit margin and safer turn-off operation
Higher switching frequencies without the efficiency loss that occurs with traditional FET-based switching
- FIT of less than 1 demonstrates reliability in harsh environments
Optimize rack space by reducing copper usage

With over 175 million PowiGaN switches in use in fast chargers, EVs and data centers, Power Integrations continues to lead the high-voltage GaN innovation. The InnoMux2-EP switcher IC offers a unique solution for auxiliary power in 800VDC data centers. The integrated 1700V PowiGaN switch supports 1000VDC input voltages, while its SR ZVS operation achieves efficiencies exceeding 90.3% in 12V systems with liquid-cooled, fanless 800VDC architectures.

Product documentation related

The datasheet and white paper for this product can be downloaded immediately from the manufacturer's website below.

• PowiGaN-based product page
• InnoMux2-EP Products

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