650V Qspeed Silicon Diodes Available as Replacement for SiC Components in AI Servers, Communications, Networking, and Industrial Applications

Power Integrations' ultra-fast Qspeed H-Series diodes are now available in variants rated at 650 V up to 30 A. These high-power devices feature the industry's lowest reverse recovery charge (Qrr) for silicon diodes, providing a compelling alternative to silicon carbide (SiC) diodes, offering similar efficiency and voltage derating performance with the attractive price and power delivery reliability of silicon diodes.

Designed to address the increasing power requirements of modern applications, the new diodes are ideal for 1.6kW to 11kW continuous conduction mode (CCM) PFC boost converter applications. They easily achieve 80% derating on breakdown voltage in server, telecom, networking and industrial power supplies using power hungry CPUs and GPUs.

The reverse recovery charge of 650V Qspeed diodes is comparable to SiC diodes, providing near identical system efficiency in 3.4kW charger applications. The hybrid PiN and Schottky diode technology provides a soft reverse recovery current characteristic that reduces EMI and peak reverse voltage stress, eliminating the need for snubbers.

The new Qspeed diodes are housed in an industry standard TO-220AC package and provide 2.5kV isolation and excellent thermal dissipation. They can be used as a drop-in replacement for comparable SiC diodes. Click on the part numbers below to download the datasheet.

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