Microchip SiC Discrete Products

Microchip SiC Discrete Product Brief

Microchip's SiC power devices include modular and discrete products. A discrete product is a product that contains one or two chips in one package. Microchip's line of SiC discrete products includes MOSFETs and Schottky Barrier Diodes (SBDs).

Advantages of SiC power devices

  • Improved system efficiency due to lower switching losses
  • higher switching frequency
  • Magnetic components can be made smaller, making the entire system smaller and lighter.
  • High voltage/low on-resistance ⇒ SiC MOSFET
  • Zero recovery ⇒ SiC SBD

Microchip Product Features

SiC MOSFET

  • Withstand voltage (VDSS): 700V, 1200V, 1700V, 3300V
  • Gate voltage (VGS): -10V to +23V
  • Low ON resistance: 15mΩ@700V, 17mΩ@1200V
  • Avalanche resistance, short circuit resistance, low internal gate resistance (ESR)
  • Junction temperature: -55°C to 175°C, (3300V product: -55°C to 150°C)
  • Package: TO-247-4 (with Source Sense pin), TO-268 (surface mount), etc.
  • 3300V products: 84mΩ, 416mΩ released, 25mΩ product under development

Microchip SiC MOSFET Product Line

 

MOSFETs: 700V
product name ON resistance
Rds on
(mΩ)
drain current
ID (A)
gate input charge
Qg (nC)
Input capacitance
Ciss (pF)
avalanche
energy
EAS (mJ)
short circuit withstand
SCWT (uS)
internal
gate resistance
ESR (Ω)
package
MSC015SMA070B 15 140 215 4500 4400 3 0.69 TO-247-3
MSC015SMA070B4 TO-247-4
MSC015SMA070S 126 TO-268
MSC035SMA070B 35 77 99 2010 1400 3 1.13 TO-247-3
MSC035SMA070B4 TO-247-4
MSC035SMA070S 65 TO-268
MSC060SMA070B 60 39 56 1175 1150 3 2.6 TO-247-3
MSC060SMA070B4 TO-247-4
MSC060SMA070S 37 TO-268
MSC060SMA070SA 48 TO-263-7
MSC090SMA070B 90 28 38 785 770 3 4 TO-247
MSC090SMA070S 25 TO-268

 

MOSFET: 1200V
product name ON resistance
Rds on
(mΩ)
drain current
ID (A)
gate input charge
Qg (nC)
Input capacitance
Ciss (pF)
avalanche
Tolerance
EAS (mJ)
short circuit withstand
SCWT (uS)
internal
gate resistance
ESR (Ω)
package
MSC017SMA120B 17 113 249 5280 3500 3 0.71 TO-247-3
MSC017SMA120B4 TO-247-4
MSC017SMA120J 88 SOT-227
MSC017SMA120S 100 TO-268
MSC025SMA120B 25 103 232 3020 3500 3 0.88 TO-247-3
MSC025SMA120B4 TO-247-4
MSC025SMA120J 77 SOT-227
MSC025SMA120S 89 TO-268
MSC040SMA120B 40 66 137 1990 2000 3 1.2 TO-247-3
MSC040SMA120B4 TO-247-4
MSC040SMA120J 53 SOT-227
MSC040SMA120S 64 TO-268
MSC080SMA120B 80 37 72 1100 1000 3 1.9 TO-247-3
MSC080SMA120B4 TO-247-4
MSC080SMA120J SOT-227
MSC080SMA120S 35 TO-268
MSC080SMA120SA 43 TO-263-7
MSC180SMA120B 180 21 34 510 - - 3.29 TO-247-3
MSC180SMA120S TO-268
MSC360SMA120B 360 11 21 255 100 2.6 3.7 TO-247-3
MSC360SMA120S TO-268

 

MOSFETs: 1700V
product name ON resistance
Rds on
(mΩ)
drain current
ID (A)
gate input charge
Qg (nC)
Input capacitance
Ciss (pF)
avalanche
Tolerance
EAS (mJ)
short circuit withstand
SCWT (uS)
internal
gate resistance
ESR (Ω)
package
MSC035SMA170B 35 68 178 3300 4000 3 0.85 TO-247-3
MSC035SMA170B4 TO-247-4
MSC035SMA170S 59 TO-268
MSC750SMA170B 750 7 11 184 360 2.5 2.89 TO-247-3
MSC750SMA170B4 TO-247-4
MSC750SMA170S 6 TO-268
MSC750SMA170S 5 TO-263-7

 

MOSFET: 3300V
product name ON resistance
Rds on
(mΩ)
drain current
ID (A)
gate input charge
Qg (nC)
Input capacitance
Ciss (pF)
avalanche
Tolerance
EAS (mJ)
short circuit withstand
SCWT (uS)
internal
gate resistance
ESR (Ω)
package
MSC080SMA330B4 84 41 55 3462 100 - 3.7 TO-247-4
MSC400SMA330B4 416 11 37 579 - - 3.7 TO-247-4

*September 2022

SiC SBD (Schottky barrier diode)

  • Withstand voltage (VR): 700V, 1200V, 1700V, 3300V
  • Forward voltage (VF): 1.5V , 2.1V (3300V)
  • Current capacity: 10A to 100A
  • Junction temperature: -55°C to 175°C
  • Supports avalanche tolerance
  • Package: TO-247, TO-268 (surface mount), etc. available
  • 3300V products: 30A and 90A products released

Microchip SiC SBD Product Line

 

SBD: 700V (VF=1.5V)
product name Constitution forward current
IF (A)
@25℃
forward current
IF (A)
@135℃
repetitive peak current
IFRM (A)
reverse leakage current
IRM (uA)
total capacity charge
Qc (nC)
Avalanche Energy
EAS (mJ)
package
MSC010SDA070B single 24 10 34 3 27 100 TO-247-2
MSC010SDA070S TO-268
MSC010SDA070K TO-220
MSC030SDA070B 60 25 79 1 83 TO-247-2
MSC030SDA070S TO-268
MSC030SDA070K 56 24 TO-220
MSC050SDA070B 88 39 128 15 133 TO-247-2
MSC050SDA070S TO-268
MSC030SDA070BCT common cathode 60 25 79 1 83 TO-247-3
MSC050SDA070BCT
MSC2X31SDA070J
MSC2X30SDA070J
Parallel/anti-parallel 30 @90°C 1 83 SOT-227
Viso=2500V
MSC2X51SDA070J
MSC2X50SDA070J
50 @80℃ 15 133
MSC2X101SDA070J
MSC2X100SDA070J
100 @70℃ 30 266

 

SBD: 1200V (VF=1.5V)
product name Constitution IF (A)
@25℃
IF (A)
@135℃
IFRM (A) IRM (uA) Qc (nC) EAS (mJ) package
MSC010SDA120B single 25 12 38 3 48 100 TO-247-2
MSC010SDA120K 27 13 TO-220
MSC015SDA120B 39 17 55 10 73 TO-247-2
MSC015SDA120K 36 16 51 TO-220
MSC020SDA120B 49 22 64 6 91 TO-247-2
MSC020SDA120S TO-268
MSC020SDA120K TO-220
MSC030SDA120B 65 29 92 9 130 TO-247-2
MSC030SDA120S TO-268
MSC030SDA120K 70 32 92 TO-220
MSC050SDA120B 109 44 154 15 224 TO-247-2
MSC050SDA120S TO-268
MSC030SDA120BCT common cathode 65 29 92 9 130 TO-247-2
MSC050SDA120BCT 109 49 154 15 224
MSC2X31SDA120J
MSC2X30SDA120J
Parallel/anti-parallel 30 @100℃ 9 130 SOT-227
Viso=2500V
MSC2X51SDA120J
MSC2X50SDA120J
50 @100℃ 15 224
MSC2X101SDA120J
MSC2X100SDA120J
100 @90℃ 30 448

  
 
 

SBD: 1700V (VF=1.5V)
product name Constitution IF (A)
@25℃
IF (A)
@135℃
IFRM (A) IRM (uA) Qc (nC) EAS (mJ) package
MSC010SDA170B single 31 14 43 4 84 100 TO-247-2
MSC010SDA170S TO-268
MSC030SDA170B 82 38 116 4 230 TO-247-2
MSC030SDA170S TO-268
MSC050SDA170B 132 62 192 50 410 TO-247-2
MSC050SDA170S TO-268
MSC2X31SDA170J
MSC2X30SDA170J
Parallel/anti-parallel 30 @100℃ 4 230 SOT-227
Viso=2500V
MSC2X51SDA170J
MSC2X50SDA170J
50 @117°C 50 410

 

SBD: 3300V (VF=2.1V)
product name Constitution IF (A)
@25℃
IF (A)
@135℃
IFRM (A) IRM (uA) Qc (nC) EAS (mJ) package
MSC030SDA330B single 62 30 93 5 274 TO-247-2
MSC090SDA330B2 184 89 258 15 927

*September 2022

Package example

Pamphlet

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