GaN Product Brief

GaN has a much higher bandgap (3.4 eV) and significantly higher electron mobility than SiC. The dielectric breakdown field strength is 10 times that of silicon (Si), and the electron mobility is 2 times. The output charge and gate charge, which are important in high-frequency operation, are 1/10 that of Si, and the reverse recovery charge is almost zero.

GaN is the technology of choice for advanced resonant topologies that enable new approaches such as new topologies and current modulation. Infineon's GaN solution is based on the enhancement mode (e-mode) concept, the most robust and high performance concept on the market, with fast turn-on and turn-off. Focusing on high performance and robustness, it provides great added value to a wide range of systems for various applications.

Product features

• Best-in-class efficiency in SMPS
• Small and lightweight design
• Optimizing GaN Switching Performance with Surface Mount Packages
• Proposal as a set with Driver IC

Product lineup

Related information

Inquiry / Quotation

If you have any questions about this product or would like a quote, please contact us using the link below.