CIPOS™ Maxi Silicon Carbide IPM IM828-XCC

Infineon CIPOS™ Maxi IM828-XCC Overview

High-performance CIPOS™ Maxi's Transfer Molded Silicon Carbide IPM IM828-XCC integrates six CoolSiC™ MOSFETs with an optimized 1200V 6-channel SOI gate driver for improved reliability, better protection, and optimal resulting in reduced PCB size and system cost. This IPM combines over 8kW rated power with exceptional power density, reliability and performance in the most compact package in the 1200V class. It also provides excellent protection features such as undervoltage lockout for all channels, all switch-off during protection, short-circuit protection, overcurrent protection, and temperature monitoring.

Product features

Suitable for three-phase PFC and active filters for HVAC (active power factor correction)
Infineon is the only company offering transfer-molded SiC MOSFET IPMs as of 2020
Dual in-line molded module with fully isolated DCB substrate
1200V CoolSiC™ MOSFETs
Built-in bootstrap function
High efficiency up to 99%
Wide switching speed range up to 80kHz

Block Diagram

IM828-XCC Features

Parametrics	IM828-XCC
Additional Information	Electrical
Built in NTC	Yes
Configuration	3 Phase Open Emitter
Encryption	no
_IC (@ 25°)	35.0A
_Pmot (10kHz)	4.8 kW
Product Category	CoolSiC™ MOSFET Modules
Product Group	CIPOS™ Maxi
Product Name	IM828-XCC
Qualification	Industrial
R _{DS (on)} max	55.0 mΩ
Rated Current	20.0A
Switch Type	CoolSiC™ MOSFETs
Voltage Class	1200.0V