OptiMOS™ Power MOSFET 40V in Infineon PQFN (3.3 X 3.3mm) Source-Down Package Product Brief
The new IQE013N04LM6 and IQE013N04LM6CGATMA1 OptiMOS™ 40V in PQFN 3.3X3.3mm source-down package are the first expansions in Infineon's source-down portfolio. With excellent performance and potential for layout optimization, these MOSFETs drive higher system efficiency and significant increases in power density.
Product features
- Possibility of layout optimization
- More efficient use of PCB area
- Significant reduction in RDS(on) up to 25%
- Excellent thermal performance of Rth(jc)
- Highest power density and performance
- high current capacity
Product lineup
| Package | Voltage Class [V] | RDS(on) max. @VGS = 10V | Part number | Best fit for: |
|
PQFN 3.3x3.3 |
40 |
1.3 |
IQE013N04LM6 |
Standard Gate |
|
1.3 |
IQE013N04LM6CG |
Center Gate |
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