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OptiMOS™ Power MOSFET 40V in Infineon PQFN (3.3 X 3.3mm) Source-Down Package Product Brief

The new IQE013N04LM6 and IQE013N04LM6CGATMA1 OptiMOS™ 40V in PQFN 3.3X3.3mm source-down package are the first expansions in Infineon's source-down portfolio. With excellent performance and potential for layout optimization, these MOSFETs drive higher system efficiency and significant increases in power density.

Product features

  • Possibility of layout optimization
  • More efficient use of PCB area
  • Significant reduction in RDS(on) up to 25%
  • Excellent thermal performance of Rth(jc)
  • Highest power density and performance
  • high current capacity

Product lineup

Package Voltage Class [V] RDS(on) max. @VGS = 10V Part number Best fit for:

PQFN 3.3x3.3

40

1.3

IQE013N04LM6

Standard Gate

1.3

IQE013N04LM6CG

Center Gate

Buy at Macnica-Mouser

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