Automotive SiC MOSFET Product Overview

Infineon's own 1200V withstand voltage SiC MOSFET for automotive use is released by adopting 110μm thin wafer technology to suppress generated power loss. We offer the industry's most advanced SiC MOSFET based on trench technology, which is compatible with a maximum operating temperature of 175°C and achieves 1200V in a TO-247 package. In the future, we plan to release products with different on-resistances and different packages, so we will introduce them one by one.

Product features

• Best-in-class quality level in automotive SiC
• very low switching losses
• Robust against short circuits and avalanche breakdown

Product lineup

Related information

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