◆ Ultra-fast switching unique to GaN

Extremely low gate charge (Qg) enables fast switching.

IGC033S101：Qg = 1.2 nC（@ Vgs = 6 V）

IGB110S101：Qg = 2.0 nC

This significantly reduces switching losses and improves power supply efficiency.

◆ Zero reverse recovery charge reduces loss and noise

Since there is no noise or loss due to reverse recovery, it is ideal for high frequency operation and high efficiency synchronous rectification circuits.

◆ Low loss operation due to excellent on-resistance

Each product achieves low RDS(on)

IGB110S101：1.1 mΩ typ.

IGC033S101 / IGC033S10S1：2.4 mΩ typ.

This reduces conduction losses and maximizes power conversion efficiency.

◆Small, high-heat dissipation package suitable for high-density design

IGC033S101 / IGC033S10S1：RQFN 3.3 mm × 3.3 mm

IGB110S101：RQFN 5 mm × 6 mm

All products use bottom-side cooling to efficiently transfer heat to the board. This allows for high freedom in heat dissipation design, making it possible to downsize the power supply and optimize it for multi-layer boards.

◆ High reliability certified by JEDEC

All products in this family are JEDEC compliant, allowing you to use them with confidence. For example, the IGC033S101 supports an operating temperature range of −40°C to +150°C, supporting reliable system designs.