The ISOFACE™ 4-channel digital isolator family supports data rates up to 40 Mbps and ensures signal integrity over a wide ambient operating temperature range (-40°C to +125°C) and product variation.
Four data channels in the DSO-16 widebody package enable simplified high power density designs and improve system efficiency with low current consumption. Product variations are available with different channel configurations, fail-safe default output states, and output enable configurations.

Infineon's automotive PSoC™ 4 S series is now available with enhancements, including the Automotive PSoC™ 4100S Max family, which offers up to 384 KB of flash capacity and up to 84 pins of analog/digital GPIO. The family also introduces MSC CAPSENSE™, the latest generation of CAPSENSE™ IP that provides superior performance and noise immunity.

PSoC™ 4 HV PA 144k is a fully integrated, programmable embedded system for lead (acid) battery monitoring and management. PSoC™ 4 HV PA 144k is a distinct subfamily of the PSoC™ 4 HV PA lineup. This system-on-chip features a high-performance Arm® Cortex® M0+ processor that can operate up to 48 MHz (boostable to 49.152 MHz).
Additionally, it features programmable and reconfigurable analog and digital blocks, providing great flexibility for a variety of applications.

The PSoC™ 4000T microcontroller features an Arm® Cortex®-M0+ CPU and Infineon's 5th generation high-performance CAPSENSE™ capacitive sensing subsystem. This industry-leading capacitive sensing technology consumes 10x less power and delivers 10x better SNR performance than the previous generation CAPSENSE™. New "always-on" sensing technology delivers ultra-low power consumption in both active and standby modes, resulting in longer battery life.

Infineon introduces the industry's first 15 V trench power MOSFET featuring the latest OptiMOS™ 7 technology. Compared to the market-proven OptiMOS™ 5 25 V, the lower breakdown voltage reduces RDS(on) and FOMQg (Figure of Merit) by approximately 30%, and FOMQOSS by approximately 40%. Reducing conduction and switching losses, combined with cutting-edge packaging technology, facilitates thermal management and increases power density and efficiency to even higher levels.
The product lineup consists of clip-reinforced PQFN (3.3 x 3.3) source-down variant packages with pulsed current capacity of over 500 A and junction-to-case thermal resistance (RthJC) of 1.6K/W.

OptiMOS™ 7 40 V is Infineon's new automotive MOSFET technology.
25% improvement in Ron compared to traditional OptiMOS™ 6. OptiMOS™ 7 thus offers the highest power density and energy efficiency with the lowest on-resistance in the industry.
Infineon maintains its leading position in automotive power MOSFETs for years to come by delivering the best Ron A in its class.

Infineon's 62 mm CoolSiC™ MOSFET half-bridge modules now include a 2 kV version. Available in 2.6 mΩ and 3.5 mΩ, M1H technology improves chip performance with respect to VGS(th) drift and RDS on drift, negative gate drive voltage window. Additionally, both products are available with a Thermal Transfer Material (TIM) dispensing option.

The 62 mm half-bridge module with 1200 V CoolSiC™ MOSFET uses M1H technology to improve chip performance for VGS(th), RDS(on) drift, and gate drive voltage window. Some of these modules are coated with thermally conductive material (TIM).

650V CoolMOS™ CFD7A SJ MOSFET Top-Side Cooling (TSC) and Bottom-Side Cooling (BSC) QDPAK package options are members of the automotive-qualified CoolMOS™ CFD7A product family. CoolMOS™ CFD7A offers greater design flexibility than previous generations, while delivering higher reliability and power density. Top and bottom heat dissipation improves power density and reduces parasitic source inductance. Features a Kelvin source terminal and 3.2 mm creepage distance.

Optimized for industrial drives, TRENCHSTOP™ IGBT7 chips deliver high power density and low total losses. Additionally, the Easy3B package provides high rated current with low Rth and high CTI values.

ITS6035S-EP-K is an industrial single channel smart high-side switch with diagnostic features and enhanced protection features, primarily used in programmable logic controllers (PLCs). The device provides dedicated pins for fast discharge function and adjustable current limit for reliable system protection. The ITS6035S-EP-K is designed to switch drive resistive, inductive, and capacitive loads.

The NAC1081 is an NFC actuation controller with H-bridge and energy harvesting module for cost-effective development of passive smart actuators such as passive locks. Low-power microcontroller based on ARM® Cortex®-M0 includes NFC front end, sensing unit, motor driver, and energy harvesting functionality, allowing customers to develop smart actuators with minimal system BOM requirements can.
Flexible IC architecture and smart hardware/software partitioning help you take full advantage of software-defined features.

OPTIGA™ Connect IoT is an embedded SIM (eSIM) solution for cellular IoT devices. Easily, securely, and cost-effectively deploy and manage cellular-enabled IoT devices globally. It comes pre-installed with a GSMA-compliant operating system and has pre-built connectivity capabilities. Additionally, Tata Communications will be the connectivity partner. OPTIGA™ Connect IoT is compliant with Common Criteria EAL5+ certified eSIM hardware and is designed to exceed the security standards typically required in today's industry.
All applications and regions have a common SKU except India, which has a specific Stock Keeping Unit (SKU).

OPTIGA™ Trust Charge Auto is a secure in-vehicle wireless charging solution that complies with the latest Qi 1.3 specifications. It supports up to 15W of power and features Common Criteria EAL6+ certified hardware that exceeds WPC security requirements. Infineon's security products are turnkey solutions that simplify key logistics and security integration and include software and documentation. It is suitable for mobile phones, tablets, accessories and other small electronic devices that charge according to Qi standards.
Additional information: NDA required.

TRAVEO™ T2G Body High Evaluation Kit (KIT_T2G-B-H_EVK) is the perfect tool for developing and testing projects using microcontrollers. the Company kits are designed to provide you with all the basic parts needed to program your TRAVEO™ T2G CYT4BF MCU at an affordable price.

EVAL-M7-D112T is a control board for the MADK platform. The iMOTION™ driver IMD112T enables field-oriented motor control and power factor correction and is equipped with a three-phase gate driver.
The iMOTION™ Solution Designer (iSD) PC tool supports firmware revisions, performs system configuration, device setup, and final system adjustments.
In combination with a compatible power board, the EVAL-M7-D112T targets motor systems such as fans, pumps, and compressors.

EVAL-M7-HVIGBT-PFCINV1 is a MADK platform control board.
It implements a three-phase inverter and power factor correction (PFC) that operates at PWM rates up to 100 kHz in CCM mode. The inverter stage uses the latest generation TRENCHSTOP™ RC-IGBT and the PFC stage uses a high-speed TRENCHSTOP™ 5 IGBT.
In combination with a compatible control board, the power supply board becomes a target application for motor systems such as fans, pumps, and compressors.

The EVAL-M7-HVIGBT-PFCINV4 is a MADK platform control board.
It implements a three-phase inverter and power factor correction (PFC) that operates at PWM rates up to 40 kHz in CCM mode. The inverter stage uses the latest generation TRENCHSTOP™ RC-I inverter and the PFC stage uses high-speed TRENCHSTOP™ 5 IGBTs.
In combination with a compatible control board, the power supply board becomes a target application for motor systems such as fans, pumps, and compressors.

This evaluation board is equipped with XDP710-002. The XDP710-002 is a wide input voltage range hot-swap controller that controls FET turn-on to reduce inrush current in capacitive loads. Combined with the module EVAL_XDP710_FET, it allows testing the controlled turn-on of N-channel MOSFETs of various footprints, with the option to add multiple FETs in parallel to obtain higher power levels.