Site Search

New product information for May 2023

Regarding the agenda, it is as follows.

For details, please refer to the attached document.

agenda

TRAVEO™ T2G CYT3DL

TRAVEO™ CYT3DL is a family of TRAVEO™ T2G microcontrollers dedicated to automotive systems such as instrument clusters and heads-up displays (HUDs). TRAVEO™ T2G devices are manufactured in an advanced 40nm process. The CYT3DL features a Cortex®-M7 operating up to 240MHz, WVGA GFX and is available in two different packages, 216-pin TEQFP and 272-pin BGA. It also integrates Infineon's low-power Flash memory and multiple high-performance analog and digital peripherals to build a secure computing platform.

TRAVEO™ T2G CYT4DN

TRAVEOTM CYT4DN is a family of TRAVEO™ T2G microcontrollers dedicated to automotive systems such as instrument clusters and heads-up displays (HUDs). The family features a 2D graphics engine, sound processing, two Arm® Cortex®-M7 CPUs for primary processing running up to 320MHz, and an Arm® Cortex®-M0+ CPU for peripherals and security processing. It also features 720p GFX and a unique 327-ball BGA package.

1200 V half-bridge gate driver with integrated bootstrap diode and OCP: 2ED132xS12x family

The EiceDRIVER™ SOI family adds the first 1200 V SOI half-bridge configuration for high power applications such as commercial air conditioning systems, heat pumps, servo drives, industrial inverters, pumps and fans (up to 10 KW). The 2ED132x series consists of four products in two packages: DSO-16 and DSO-20, both in 300 mil wide body packages. These products are perfectly suited for 1200 V SiC MOSFETs as well as IGBTs. Infineon's SOI technology offers excellent ruggedness and noise immunity against negative voltage transients on the VS pin (SOI by definition has no parasitic thyristor structure). This results in a guaranteed -VS transient immunity of 100 V for repeated 700 ns pulses.

750V EDT2 Discrete IGBTs

The device features the benchmark EDT2 IGBT technology, withstands 750 V and has minimal switching and conduction losses. This allows for battery voltages up to 450 VDC. Combining robust and field-proven EDT2 technology with outstanding Infineon quality can significantly improve the performance and reliability of inverter systems. The enclosed diode is a fast recovery anti-parallel EmitterControlled diode with efficient soft switching action.

EiceDRIVER™ 2EDi gen2 – 2-channel isolated gate driver IC

EiceDRIVER™ 2Edi, a product family of 2-channel isolated gate driver ICs, are designed for high performance and robust operation of CoolMOS™ SJ MOSFETs, CoolGaN™ GIT HEMTs and SiC MOSFETs under high power switching noise.
It is used in primary-to-secondary controlled hard-switching and soft-switching topologies. Essential for optimizing power conversion efficiency and ensuring robustness of switch-mode power supplies during normal and abnormal operation.

XENSIV™ - TLE4971 magnetic current sensor for optical inspection in a small TISON-8-6 SMD package

Current sensor with integrated current path for automotive and industrial applications. High accuracy miniature coreless magnetic sensor with integrated current path for AC and DC measurements. Provides an analog output proportional to the measured current value. In addition, two digital outputs allow overcurrent detection. It uses Infineon's proven and robust monolithic Hall technology for the measurement of magnetic fields generated by electric currents, resulting in high accuracy and high linearity. The newly developed TISON-8-6 power package enables optical inspection on the assembly line required for automotive use. With a wide measurement range of up to ±120 A, it senses current without the adverse effects of hysteresis and saturation that plague core-based sensors.

Inquiry

If you have any questions about Infineon products, please feel free to contact us.

Infineon Manufacturer Information Top

Click here for Infineon manufacturer information top page.