New product information for March 2023

Regarding the agenda, it is as follows.

For details, please refer to the attached document.

agenda

1200 V TRENCHSTOP™ IGBT7 S7

Discrete IGBT for hard switching with 1200 V/8-120 A TRENCHSTOP™ IGBT7 S7 and EC7 diodes in TO-247 package. Achieving low VCEsat results in very low conduction losses in target applications. In addition, by incorporating a very soft and high-speed emitter control diode, switching losses are minimized, resulting in low losses overall.

1200 V TRENCHSTOP™ IGBT7 H7

Featuring a 1200 V/50 A hard-switching TRENCHSTOP™ IGBT7 H7 in a TO-247 4-pin package, this discrete product is ideal for decarbonization-focused applications such as photovoltaics, uninterruptible power supplies, and battery chargers. Developed to meet the demands of

X3 Compact POLARIS (1ED314x) - 1-channel isolated gate driver, 6.5 A, 3 kV (rms), independent outputs, UL1577 certified

The X3 Compact (1ED31xx) family is a compact, easy-to-use isolated gate driver family with options such as Miller clamp functionality.
The recently released gate driver family now includes a DSO-8 150 mil narrow body package option (1ED314x).

CoolGaN™ 600 V GIT HEMT

Infineon's CoolGaN™ GIT HEMT is a highly efficient GaN (Gallium Nitride) transistor technology for power conversion in the voltage range up to 600V.
With extensive experience in the semiconductor market, Infineon's GaN technology is maturing the e-mode concept in end-to-end production with volume production. Market-leading in quality, CoolGaN™ GIT HEMTs are guaranteed to the highest standards and offer the most reliable, high-performance solution of all GaN HEMTs on the market.

EasyPACK™ CoolSiC™ MOSFET booster module for 1200 V solar applications

The EasyPACK™ 1B booster module with CoolSiC™ M1H MOSFET is ideal for 1200 V solar applications and comes with PressFit PIN and NTC.

OptiMOS™ 5 power MOSFET 60 V, TOLT package

Infineon's newest top-side cooled (TOLT) package is a TO-lead top-side cooled package for excellent thermal performance and is also used in OptiMOS™5 60 V (IPTC007N06NM5 and IPTC0012N06NM5). This innovative package is combined with key features of OptiMOS™ 5 technology to provide best-in-class 60 V and over 400 A high current ratings for high power density designs.

OptiMOS™ 6 Power MOSFETs 120V

Infineon's OptiMOS™ 6 120 V power MOSFETs have significantly improved all parameters compared to the previous generation. The OptiMOS™ 6 120 V family
Suitable for both hard-switching and soft-switching, high-switching frequency and low-switching frequency applications, both normal and logic levels are available. It can be used in a variety of applications such as industrial power supplies, solar power, chargers, low voltage drives and power tools.

OptiMOS™ Power MOSFET 40 V to 150 V, SuperSO8 DSC Package

OptiMOS™ 6 Power MOSFET 40 V and OptiMOS™ 5 Power MOSFET 40 V to 150 V in SuperSO8 DSC (double-sided cooled) package with industry standard
Provides all the thermal management benefits of a double-sided cooling solution in a footprint.
The SuperSO8 DSC has a lower RthJC-top than SuperSO8 and other PQFN 5x6 packages, which in combination with bottom-side cooling through the PCB allows effective top-side cooling. About 30% of the heat generated in the MOSFET die is transferred through the top surface, leaving less heat to the PCB. Therefore, even with the same amount of heat dissipation,
Either the printed circuit board is cooler and more reliable, or the MOSFETs can handle more power, increasing power density. So, for the same power dissipation, either the printed circuit board is cooler and more reliable, or more power can be handled by the MOSFETs, resulting in higher power density.

SuperSO8 and PQFN 3.3 x 3.3 P-channel power MOSFET

The P-Channel Power MOSFET family offers the industry's best price/performance performance by using cost-effective packaging and advanced, reliable and mature silicon technology.

IM69D128S - Ultra Low Power Digital XENSIV™ MEMS Microphone

The IM69D128S is an ultra-low power consumption digital microphone designed for applications requiring high SNR (low self-noise), long battery life and high reliability. An excellent signal-to-noise ratio (SNR) of 69dB (A) ensures a crystal clear audio experience without sacrificing battery life.
Equipped with an innovative digital microphone ASIC, the IM69D128S sets a new benchmark by reducing current consumption to 520 μA (almost half the current consumption of similar performance models on the market).
In addition, the IM69D128S also features technology to switch between different power and performance profiles without causing user-audible artifacts (glitches).
Thanks to Infineon's new SDM (Sealed Dual Membrane) MEMS technology, the IM69D128S achieves high dust and water resistance (IP57) at the microphone level.

IM70D122 - Digital high-sensitivity XENSIV™ MEMS microphone that achieves high-quality sound on notebook PCs and tablet devices

The high-performance digital XENSIV™ MEMS microphone IM70D122 takes full advantage of Infineon's SDM (Sealed Dual Membrane) technology to achieve a very high SNR of 70dB (A) and a very high sensitivity of -26dBFS. Especially with its high sensitivity and high SNR, the IM70D122 is perfectly suited for advanced audio capture to enhance the audio experience in laptops, tablets, cameras, conferencing systems, etc. The microphone is based on Infineon's new SDM (Sealed Dual Membrane) MEMS technology, which provides a high degree of dust and water resistance (IP57) at the microphone level.

REF_XDPS2221_140W1 – 140W Board for Ultra High Power Density USB-C Charger/Adaptor

The reference board REF_XDPS2221_140W1 is developed for USB-PD applications with a wide input range and output voltage of 5 V to 28 V, with a nominal output power of 140W.

REF_5QR1680BG_30W1 – 30 W auxiliary power supply for refrigerators

REF_5QR1680BG_30W1 uses Infineon 5th generation quasi-resonant CoolSET™ family (ICE5QR1680BG) in flyback topology configuration
Reference design for auxiliary power supply.

EVAL-6ED2231S12TM1 Power Evaluation Board

The EVAL-6ED2231S12TM1 power evaluation board uses Infineon's CoolSiC™ MOSFET modules for motor control and SOI gate driver technology.
You can check/verify. One EasyPACK™ 1B 1200 V CoolSiC™ MOSFET 3-phase module, Infineon 3-phase SOI for motor control applications
(Silicon on insulator) Includes 1 gate driver IC, M1 connector.
The EVAL-6ED2231S12TM1 board is compatible with the EVAL-M1-101T control board for the iMOTION™ Module Application Design Kit (MADK), or
Infineon's EasyPACK™ 1B CoolSiC™ MOSFET modules in combination with other control boards with compatible M1 connectors
Developed to support customers' first steps in designing applications using 3-phase gate drivers.

New support for AURIX™ MC-ISAR TC3x MCAL ASIL D driver and SIL-2 compliant AUTOSARv4.4.0

AURIX™ TC3zxx MCAL has added and enhanced support for ASRv4.4.0 in addition to ASRv4.2.2 MCAL to support OEM software.
In addition, we have updated the MC-ISAR TC3xx roadmap to provide an ASIL D compliant driver to easily support ASIL D applications.
became. The upcoming maintenance release 2.25.0 will bring the main driver to ASIL D compliance. The product name of the ASIL D compliant driver to be released in the future is "MC-ISAR AS440 EXT TC3xx". Release 2.30.0 will also support IEC 61508 SIL-2.

Inquiry

If you have any questions about Infineon products, please feel free to contact us.

Infineon Manufacturer Information Top

Click here for Infineon manufacturer information top page.