Product introduction
The gallium nitride (GaN) process, which enables high power density, makes compact, high-power power amplifiers feasible. By selecting GaN products, the number of components can be reduced and the footprint can be made smaller. As a result, it is possible to configure compact, highly efficient and highly reliable power amplifier circuits. This has increased the demand for GaN process products for RF circuits such as avionics, radar, satellite and defense systems that are demanding in terms of weight, power consumption and system size.
Analog Devices is working on various frequency band applications. Using GaN process technology, we manufacture RF amplifiers/microwave power amplifiers. It has an output power level of 35Watt, an efficiency of over 50%, and covers a wide frequency band from 2 to 20GHz. The following graph compares GaN technology with other technologies and shows the ability to achieve high power and wide frequency range.
GaN amplifier
| HMC8205 | Power Amplifier, GaN, 0.3-6 GHz, 35 W |
| HMC1086F10 | 25 W GaN Flange Mount MMIC Power Amplifier, 2 GHz to 6 GHz |
| HMC8500LP5DE | >10 W, 0.01 GHz to 2.8 GHz, GaN Power Amplifier |
| HMC1099LP5DE | 10 Watt GaN Power Amplifier, 0.01-1.1 GHz |
| HMC1114LP5DE | 10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz |
| HMC7149-DIE | 10 Watt GaN MMIC Power Amplifier, 6-18 GHz |
| HMC1087-Die | 8 W GaN MMIC Power Amplifier, 2 GHz to 20 GHz |
| HMC1087F10 | 8 W GaN Flange Mount MMIC Power Amplifier, 2 GHz to 20 GHz |