Product Summary

The AHV85111 isolated gate driver is designed to optimally drive GaN FETs in multiple applications and topologies. The driver includes both isolated positive and negative output bias supplies, eliminating the need for external auxiliary bias supplies or high-side bootstrap. The bipolar output rails with an adjustable and regulated positive rail improve dv/dt immunity, greatly simplifying system design and reducing EMI by reducing the total common-mode capacitance. It is also capable of driving floating switches anywhere in a switching power supply topology.

Product features

・Transformer insulation barrier
・Power-Thru built-in isolation bias
- No high-side bootstrap required
- No external secondary bias required
・AEC-Q100 Grade 2 certified
Bipolar drive output with adjustable regulated positive rail
-Built-in primary side 3.3V REF bias output
- 50ns propagation delay
- Separate pull-up (2.8 Ω) and pull-down (1.0 Ω) drive output pins
Supply voltage: 10.5V < VDRV < 13.2V
- Primary VDRV and secondary VSEC undervoltage lockout
-High-speed response enable pin
- Continuous ON function: No need to recycle IN or recharge the bootstrap capacitor
・CMTI: Higher than 100 V/ns dv/dt immunity
- Creepage distance of 8.4mm
・Safety standard certification
- 5kV RMS VISO per UL1577
- Up to 8kV pk VIOTM transient isolation voltage
- Up to 1kV pk working insulation voltage

Target application

• AC-DC and DC-DC Converters: Totem-pole PFC, LLC Half/Full-Bridge, SR Drive, Multi-Level Converters, Phase-Shifted Full-Bridge
• In-vehicle: EV charger, on-board charger
• Industry: Data Centers, Transportation, Robotics, Audio
• Clean Energy: Microinverters, String Inverters, Solar Inverters

Click here for the manufacturer's site

• AHV85111 Product Page
• AHV85111 Datasheet

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