Why is Qorvo's D2PAK-7L better?

Maximizing the practical performance of SiC FETs and allowing for more design flexibility requires four more leads than the standard D2PAK-3L version. 1 lead used for Kelvin connection to source to avoid interaction of load current and gate drive, 1 lead for gate and 5 leads in parallel to source to minimize resistance and lead inductance become Of course, the D2PAK-7L 's greatest feature is its low profile and surface mount design, which makes it suitable for the latest automated assembly technology in high power density AC/DC, DC/DC and inverter products. In past product designs, it may be necessary to use leaded devices in packages such as TO-247 that have the ability to conduct heat to a significant external heat sink while still providing adequate lead separation for use at high voltages. There are many. However, in this case, there was a disadvantage that manual work was required, such as fixing with nuts and screws and soldering through holes.

Now, Qorvo's new D2PAK-7L package has excellent thermal performance when liquid-cooled on PCBs and insulated metal substrates due to silver sintered die attach and advanced wafer thinning technology. In fact, the 4th generation 750V rated SiC FETs used in this package have extremely low losses, so for applications such as battery chargers and motor drives, PCB pads alone can provide sufficient heat sinking to significant power levels. There are many. Qorvo offers seven on-resistance options ranging from 60 milliohms to 9 milliohms to suit a wide range of applications and budgets. Competitor products are only close enough to achieve 11 milliohms, falling short of Qorvo's lineup (Figure 1).

The D2PAK-7L package has inherently better external spacing of the source and drain connections compared to the TO-247 type, easing PCB layout and allowing compliance with safety agency creepage and clearance requirements, etc. , provides excellent performance. Shorter wirebonds and smaller gull-wing lead loops reduce inductance, which in turn reduces voltage spikes resulting from the high di/dt rates possible with silicon carbide switch technology.

With the introduction of the D2PAK-7L package in the Qorvo 750V SiC FET series, the smaller size, greater cost efficiency, and lower losses can now open up new cost and performance sensitive applications. Durability is also enhanced with low inductance, Kelvin gate connections, and generous voltage headroom with a 750V rating.

Qorvo's online FET-Jet CalculatorTM includes a library of D2PAK-7L parts to instantly read the efficiency, component losses, and junction temperature rise for your chosen conversion topology and cooling arrangement, giving you the best fit for your application. It is possible to select the version.

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