SiC adoption example: SIGNET EV quick charger - Semiconductor business -Macnica

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Design Analog Discrete Power Device Qorvo

SIGNET EV quick charger

SIGNET EV is a leading provider of battery chargers for EVs to the Korean and global markets, providing fast, efficient and scalable charging solutions from single-user chargers to micro-grid charging stations. . SIGNET EV's new charger design must offer next-level performance and superior durability to meet customer needs.

This means that power devices used in charging systems must offer industry-leading efficiency, durability/reliability, and be easy to design. This includes the SIGNET EV 175kW & 350kW EV chargers used in the EA project in the United States and the 50kW & 100kW chargers for domestic use.

solution

SIGNET EV employed three different Qorvo devices in its new charger station design to meet its aggressive charging time and durability goals.

● UJ3C120080K3S SiC FET – 1200V, 80mohm, TO247-3L package
● UF3C065040K3S SiC FET – 650V, 40mohm, TO247-3L package
● UJ3D06530TS SiC Schottky diode – 650v, 30mohm, TO220-2L package

merit

High Efficiency - 0.5% efficiency improvement over previous designs using competitive SiC devices.

Noise Immunity - The new charger design allows for superior noise immunity performance with Qorvo's devices compared to devices from other SiC vendors, resulting in a more "stable and durable" design.

Ease of use - Qorvo's standard gate drive (0V to 12V) allowed for easy conversion to SiC FETs, saving design time and ensuring overall cost effectiveness.