SiC Adoption Case: SemiPowerEx's SiC Power Module - Semiconductor Business -Macnica

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Design Analog Discrete Power Device Qorvo

Provides a cost-effective and stable power module system with Qorvo devices

Based in South Korea, SemiPowerEx is an innovator in the design and manufacture of semiconductor power modules based on Si, IGBT, wide bandgap SiC and GaN solutions. SemiPowerEx uses high thermal conductivity AIN (Aluminum Nitride) substrates in its modules, which improves thermal efficiency and reduces overall system size, thereby reducing heatsink costs.

In order to maintain the highest performance SiC power modules, SemiPowerEx had to explore advanced methods to ensure optimum performance of SiC FET devices. These are di/dt and dv/dt slope control, and signal management improvements for gate noise control. The targeted performance benchmark was beyond Si MOSFET and IGBT modules.

solution

SemiPowerEx upgraded the existing module to Qorvo's stacked cascode FETs UF3SC065007, UF3SC120016, UF3SC120009, and added Qorvo's recommended RC snubber circuit for stable signal operation (the snubber is on the bolt terminal). built into the module).

merit

By applying the recommended RC snubbers in combination with Qorvo's SiC FETs, SemiPowerEx was able to achieve smaller, more efficient and stable operation even at high switching frequencies.

システムの小型化と低コスト化

SemiPowerEx estimates that end users can reduce system size by 20% and cost by 10% by using Qorvo FETs and RC snubber circuits.

Increased efficiency, faster switching speed

Using a 1200V, 9mΩ SiC FET, the switching frequency was up to three times higher than that of an IGBT. When using 650V SiC FETs, the switching frequency can be improved by a factor of 2 compared to Si FET circuits and a factor of 3 compared to IGBTs.

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