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High temperature switching characteristics of Gen3 SiC-FET
One of the features of Qorvo Gen3 SiC FETs is that at higher temperatures, switching losses and Qrr decrease, and once heated, they become more efficient. This application note goes into detail about the reasons for this characteristic.
The English version is available below.
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Please download the Japanese version of the application note from the link below.
*Please refer to the English version for the official documentation. Please treat the Japanese version as a reference only.
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