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What is a Schottky Barrier Diode (SBD)?
A Schottky barrier diode (SBD) is a diode that uses a Schottky junction by contacting a metal and an n-type semiconductor. A Schottky junction is a contact between a metal and a semiconductor that exhibits a rectifying effect, and diodes made using this principle are Schottky barrier diodes. The Schottky barrier is named after the German scientist who discovered it, Walter Hans Schottky (1886–1976).
On the other hand, general rectifier diodes, fast recovery diodes (FRD), Zener diodes, etc. are diodes made using pn junctions of p-type semiconductors and n-type semiconductors.
Depending on whether it is a Schottky junction or a pn junction, the characteristics as a diode will differ.
SBDs and SiC
While SBDs have advantages such as a small forward voltage and no need for reverse recovery, they also have disadvantages such as a lack of reverse withstand voltage and a large amount of leakage current. SBD had some drawbacks. In that respect, if you use silicon carbide (SiC) to make an SBD, you can make up for the disadvantages of the SBD, and at the same time, it becomes a diode with advantages, such as "high withstand voltage", "low VF", and "reverse recovery". It has become very easy to use for high withstand voltage power applications such as "no time". In addition to these, Microchip's SiC-SBD secures avalanche resistance and is prepared for surges.
The features are summarized below.
Summary of major differences between SiC-SBD, Si-SBD, and Si-FRD
|
SiC-SBDs |
Si-SBDs |
Si-FRDs |
|
| Reverse withstand voltage (VR) | 〇 High withstand voltage is possible even with SBD structure due to the characteristics of SiC |
X Up to about 200V at maximum |
△ Compatible with medium to high withstand voltage with pn junction |
| Reverse Leakage Current (IR) | 〇 Due to the characteristics of SiC, there is little increase in leakage current even at high temperatures. |
X Increases significantly at higher temperatures Conflict with VF |
△ Increases at higher temperatures, not as much as SBD |
| Reverse recovery characteristics (Trr) | 〇 Reverse recovery charge does not occur due to n-type unipolar |
〇 Reverse recovery charge does not occur due to n-type unipolar |
△ Better than general rectifier diodes, but with a certain amount of reverse recovery charge |
| Forward voltage (VF) | △ SiC has a large bandgap, but since it is an SB junction, it is equivalent to a Si-PN junction. |
〇 Diffusion potential is small at SB junction |
△ Larger than SBD, opposite tendency to reverse recovery characteristics (Trr) |
| Forward voltage vs. temperature | 〇 Since VF rises with temperature in the area where the current is large, the current decreases and thermal runaway does not occur. Parallel connection is easy. |
X VF tends to decrease as temperature rises, and thermal runaway may occur in combination with reverse leakage current. |
△ VF tends to decrease with temperature |
SiC-SBDs from Microchip
Microchip has a line of SiC-SBD products.
・Withstanding voltage: 700V, 1200V, 1700V
・Current: 10A to 50A
・Forward voltage: 1.5V
・Avalanche resistance: 100mJ
・Package: TO-220, TO-247, TO-268, SOT-227
Product catalog
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