What are GaN devices?

In recent years, GaN (gallium nitride) devices have been attracting attention in the power electronics field.
Due to its excellent high efficiency and high frequency characteristics, GaN is used in a wide range of applications, including server power supplies and battery applications. However, unlike conventional Si (silicon) and SiC (silicon carbide) devices, GaN requires a unique drive method. There are current drive and voltage drive methods, each of which has different characteristics and advantages, so it is important to select and understand the appropriate method.
This document explains the basic structure and characteristics of GaN devices, and then provides a detailed explanation of the drive methods and differences between current-driven GaN and voltage-driven GaN. It also introduces the advantages of each method and key points to keep in mind when using them. This is ideal for those who are considering selecting a GaN device or designing a drive circuit.
You can download technical documents below.

table of contents

Sample materials

[Download the document here] Driving methods for current-driven GaN and the difference with voltage-driven GaN

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