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Growing expectations for next-generation power semiconductors
In recent years, the demand for "high efficiency" and "miniaturization" is increasing day by day.
However, power devices made of Si, which is currently the mainstream material, are approaching their physical limit values, and further improvements are becoming difficult.
Against this background, expectations for wide bandgap semiconductors (SiC/GaN, etc.) are increasing.
Infineon Technologies (Infineon) is uniquely positioned as the only company to offer all silicon (Si), silicon carbide (SiC), insulated gate bipolar transistors (IGBT) and gallium nitride (GaN) devices. increase.
Gallium Nitride (GaN), the material introduced here, is also a wide-bandgap semiconductor, allowing devices to operate at much higher voltages, frequencies and temperatures than traditional semiconductor materials such as silicon.
1. Features of Infineon CoolGaN
Features comparing Infineon's GaN and SiMOSFET
- 10 times the dielectric breakdown field strength
- Double the electron mobility
- Gate charge Qg is 1/10
- Output charge Qoss is 1/10
- Reverse recovery charge Qrr is 0 *1
- Horizontal structure
*1 Excluding Qoss
2. Areas where SiC and GaN separate
SiC and GaN are currently attracting attention, but what will be the areas where these devices can demonstrate their power in the future?
Current expectations for SiC are upward compatibility with IGBTs and expansion to higher power capacities (current, voltage).
GaN is expected to contribute to system miniaturization and high efficiency through high-speed switching.
3. Target application
The following are examples of applications that are currently expected to maximize the characteristics of GaN.
- server
- Telecom
- wireless charging
- adapter/charger
- Audio (class D amplifier)
Evaluation Board for 2.5kW Full Bridge Totem Pole PFC Circuit
EVAL_2500W_PFC_GAN_A can evaluate full-bridge totem-pole PFC using GaN.
A 2.5kW full-bridge totem-pole PFC achieves over 99% efficiency.
Infineon CoolGaN Product Lineup
|
RDS(on) max. |
DSO-20-85 Bottom-side cooling |
DSO-20-87 Top-side cooling |
HSOF-8-3 (TO-leadless) |
DFN 8x8 |
|
35 mΩ |
IGO60R035D1** |
IGOT60R035D1** |
IGT60R035D1** |
|
|
70 mΩ |
||||
|
190 mΩ |
||||
|
340 mΩ |
IGLD60R340D1** |
*Standard grade
**Coming soon
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