High-output GaN power amplifier - Analog Devices' "ADPA1112"

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RF systems such as next-generation radar, electronic warfare (EW), and wideband communications are simultaneously required to achieve wider bandwidths, higher output power, and higher efficiency. However, conventional GaAs or LDMOS-based power amplifiers have difficulty meeting these requirements in a single device, resulting in increased system complexity and board space requirements.

This article introduces Analog Devices' GaN power amplifier, the ADPA1112, along with the benefits of replacing conventional PA (power amplifier) technology with the ADPA1112.

ADPA1112 GaN Power Amplifier Covering 1GHz to 22GHz

Analog Devices' ADPA1112 is a wideband GaN power amplifier covering the 1 GHz to 22 GHz range, achieving a high output power of approximately 15 W. Its input and output are pre-matched to 50 Ω, simplifying design and reducing the burden of system development.

Another feature is the built-in RF power detector, which makes it easy to monitor and control the output. This amplifier is attracting attention as a highly practical amplifier suitable for microwave applications that require high performance, such as radar and electronic warfare.

Comparison of Traditional PA Technology and GaN (ADPA1112)

The ADPA1112's features (benefits) are summarized and compared to conventional PA technologies.

Item	ADPA1112（GaN）	GaAs	LDMOS
Frequency range	Supports a wide range of frequencies from 1GHz to 22GHz	Several GHz to 20 GHz	1GHz 〜 3GHz
bandwidth	Wide	Moderate	Wide (<1G)
output	Achieves approximately 15W (42dBm)	A few watts to 10 watts	Several tens of W to several hundred W
Power Added Efficiency (PAE)	Approximately 25% (optimized for 8-16 GHz band)	10% 〜 20%	30% 〜 45%
Power Gain	Approximately 14dB	10dB 〜 15dB	10dB 〜 20dB
Multi-band support	1 device compatible	Multiple PAs available	Almost impossible

Table 1: ADPA1112 Features (Advantages)

Benefits of replacing conventional technology

What are the benefits of replacing traditional PA technology with Analog Devices' GaN process product, the ADPA1112?

Conventional GaAs or LDMOS-based power amplifiers have difficulty simultaneously achieving the wide bandwidth, high output power, and high efficiency required for RF systems such as next-generation radar, electronic warfare (EW), and wideband communications, and this has led to issues such as increased system complexity and board space requirements.

Against this background, GaN power amplifiers are attracting attention, including Analog Devices' GaN power amplifier ADPA1112.

Advantage 1: Covering a wide range of bandwidth with one device

While PAs using GaAs have excellent high-frequency characteristics, they have a narrow bandwidth and are only compatible with frequencies from several hundred MHz to several GHz, so systems that handle multiple bands require a different PA for each band.LDMOS is characterized by high output and high efficiency, but its performance drops off sharply above 6 GHz, making it difficult to use in multi-band applications.

　
The ADPA1112 can cover the ultra-wideband from 1 GHz to 22 GHz with a single device, eliminating the need to place multiple PAs in parallel as with conventional technology. This has the advantage of achieving multi-band compatibility with a single device, significantly simplifying system configuration.

Advantage 2: Reduced component count and board space

Conventional process technologies require many peripheral components in addition to the PA itself, such as matching circuits for each band, filters, RF switches, and external power detectors, which take up board space and complicate heat dissipation design.

　
The GaN-based ADPA1112 significantly reduces external components, resulting in reduced board space, lower BOM cost, and reduced system weight thanks to the following features:

- Wideband support: Multiple PAs can be integrated

- Built-in power detector: No need to add an output monitoring circuit

- 50Ω matched inputs and outputs: no external matching circuitry required

Advantage 3: Shortened design period and reduced risk

Conventional PAs require repeated prototyping and adjustment of the matching circuit for each band, but the ADPA1112 is pre-matched to 50 ohms and provides stable performance over a wide bandwidth, significantly reducing the amount of design work required.

- No matching adjustment required

　 - ディテクター内蔵で制御回路が簡単

- 多バンド対応で試作回数削減

This article introduced the features and benefits of the ADPA1112 GaN power amplifier, which meets the wide bandwidth, high output, and high efficiency requirements of next-generation RF systems in a single device. Analog Devices' GaN power amplifier products simplify multi-band compatibility, which previously required multiple devices with GaAs or LDMOS, and also contribute to reducing the number of components, saving board space, and shortening design time.

We have an evaluation board available, so please give it a try.