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Product Summary

A Schottky barrier diode (SBD) is a diode that utilizes a Schottky barrier created by the junction of a metal and a semiconductor. It has a lower forward voltage (VF) than general PN junction diodes, and the device-specific time (reverse recovery time trr) required to turn off when the applied voltage changes from forward to reverse (switching speed) is faster). Therefore, it is an electronic component that is indispensable for improving the efficiency and reducing the size of power supply circuits.

With the demand for low power consumption in all applications, the adoption of SBDs, which are more efficient than other diodes, is increasing. On the other hand, if VF is lowered in pursuit of efficiency, IR, which has a trade-off relationship, increases, increasing the risk of thermal runaway. Therefore, it is important to determine the balance between VF and IR when selecting an SBD during circuit design. There is an inverse correlation (this is called a trade-off) between the SBD's forward voltage drop (VF) and reverse leakage current, so please pay attention to thermal design and usage conditions.

Product features

ROHM has a wide lineup of Schottky barrier diodes with a withstand voltage of 20V to 200V. The RB/RBS/RBR/RBQ series are schottky barrier diodes that have ultra-low VF to ultra-low IR series, and are widely used in overwhelming production volumes regardless of consumer, automotive, or industrial machinery. The ultra-compact series RASMID®, which boasts astonishing dimensional accuracy, uses ROHM's unique new manufacturing method to achieve a miniaturization of 0402 size, enabling higher density mounting.

In addition, by further expanding the lineup of the RBR/RBQ series, which has a proven track record in mass production, for large current, large voltage, and miniaturization, rectification and protection in a wider range of applications are possible.

Product lineup

RBR series (low VF type)

<Features>
・SBD that supports various applications with low VF characteristics
・High current efficiency by introducing high-precision process
・VRM=30V/40V/60V 3 voltage resistance lineup

RBQ series (low IR type)

<Features>
・SBDs with low IR and medium VF characteristics are ideal for switching power supplies
・Achieved high current efficiency by introducing high-precision process
・VRM=45V/65V/100V 3 voltage lineup

Package Circuit Part No. Absolute Electrical Characteristics (T J =25°C)
Maximum Ratings
V RM (V) IO (A) VF Max. I R Max.(μA) (V R =V RM)
(V) at I F (A)

V RM = 45V Type

TO-252   RBQ10BM45A 45 10 0.65 5 70
RBQ15BM45A 45 15 0.59 7.5 140
RBQ20BM45A 45 20 0.59 10 200
TO-263S RBQ10NS45A 45 10 0.65 5 70
RBQ20NS45A 45 20 0.65 10 140
RBQ30NS45A 45 30 0.65 15 200
TO-220FN RBQ10T45A 45 10 0.65 5 70
RBQ20T45A 45 20 0.65 10 140
RBQ30T45A 45 30 0.65 15 200
TO-263L   RBQ10NL45B 45 10 0.62 10 100
RBQ16NL45B 45 16 0.61 16 200
TO-263S RBQ30NS45B 45 30 0.59 30 350
TO-220FN RBQ30TB45B 45 30 0.59 30 350

V RM = 65V Type

TO-277A   RBQ3RSM65B 65 3 0.57 3 50
RBQ5RSM65B 65 5 0.64 5 50
RBQ10RSM65B 65 10 0.67 10 90
TO-252   RBQ10BM65A 65 10 0.69 5 70
RBQ15BM65A 65 15 0.63 7.5 140
RBQ20BM65A 65 20 0.63 10 200
TO-263S RBQ10NS65A 65 10 0.69 5 70
RBQ20NS65A 65 20 0.69 10 140
RBQ30NS65A 65 30 0.69 15 200
TO-220FN RBQ10T65A 65 10 0.69 5 70
RBQ20T65A 65 20 0.69 10 140
RBQ30T65A 65 30 0.69 15 200

V RM = 100V Type

TO-277A   RBQ3RSM10B 100 3 0.7 3 80
RBQ5RSM10B 100 5 0.7 5 140
RBQ10RSM10B 100 10 0.7 10 250
TO-252   RBQ10BM100A 100 10 0.77 5 80
RBQ15BM100A 100 15 0.71 7.5 140
RBQ20BM100A 100 20 0.69 10 200
TO-263S RBQ10NS100A 100 10 0.77 5 80
RBQ20NS100A 100 20 0.77 10 140
RBQ30NS100A 100 30 0.77 15 200
TO-220FN RBQ10T100A 100 10 0.77 5 80
RBQ20T100A 100 20 0.77 10 140
RBQ30T100A 100 30 0.77 15 200

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