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New product information for October 2022

Regarding the agenda, it is as follows.

For details, please refer to the attached document.

agenda

EiceDRIVER™ 1EDN71x6U - 200 V High Side TDI Gate Driver IC for GaN SG HEMTs and MOSFETs

The 1EDN71x6U is a 1-channel gate driver IC optimized for driving Infineon CoolGaN™ Schottky Gate (SG) HEMTs and other GaN SG HEMTs and Si MOSFETs. This gate driver family offers several key features that enable high performance system designs with fast switching transistors, including Truly differentiallogic input (TDI), four drive strength options, active Miller clamp, and bootstrap voltage clamp. I have it. With the TDI function, the output state of the gate driver is independent of the reference (ground) potential of the driver and only depends on the voltage difference between the two inputs, as long as the common mode voltage is below 150 V (static) and 200 V (dynamic). controlled. This eliminates the risk of malfunction due to ground bounce in low-side applications, while the 1EDN71x6U also supports high-side applications. This driver family is mounted on the TSNP-7 in a small package of 1.8 x 1.8 mm.

EiceDRIVER™ X3 Compact (1ED31xx) - Next generation 1-channel isolated gate driver family for easy design: with UVLO for SiC MOSFETs

The X3 Compact (1ED31xx) family is a compact, easy-to-design isolated gate driver family with options such as Miller clamp functionality. This gate driver family offers up to 14 A (typ) peak output current and excellent propagation delay matching. This makes them ideal for all types of switches, from conventional IGBTs and MOSFETs to SiC MOSFETs and IGBT7s. There is also a new family with undervoltage lockout (UVLO) for SiC MOSFETs. A higher UVLO and active Miller clamp feature avoids parasitic turn-on and improves application safety, making them ideal for SiC MOSFETs. The UL1577 certified X3 Compact (1ED31xx) family supports a wide range of applications including solar power generation, EV charging and energy storage systems.

Monolithically integrated TO-247 package 1100 V/30 A IGBT

The monolithically integrated 1100 V/30 A TO-247 package RC-IGBT R5 is designed to meet the demanding requirements of induction heating applications using single-ended resonant topologies. With improved FE capability, it is an ideal product to replace the conventional R3 generation.

8 Mbit and 16 Mbit EXCELON™ F-RAM

The 8Mbit and 16Mbit EXCELON™ Ferroelectric RAM (F-RAM) is the latest addition to Infineon Technologies' EXCELON™ family of next-generation F-RAM devices, offering the industry's highest density serial NVRAM (Non-Volatile Memory) and It offers superior performance and reliability for critical data acquisition. The new 8Mbit and 16Mbit EXCELON™ F-RAMs feature small PINSPI and Quad SPI (QSPI) interfaces for high-speed non-volatile datalogging in extreme temperature and harsh environments such as industrial and automotive. You can also use it.

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